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US3814955A Expired / Lapsed US ⏱️ 0.0 years remaining

Charge coupled semiconductor element with noise cancellation

Assignee: Hitachi Ltd
•
Filing: 1972-06-05
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Granted: 1974-06-04
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Expires: 1992-06-05
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Abstract

Abstract A charge coupled semiconductor element comprises a main path into which charges, as signals, are injected to be shifted therethrough, and a by-path into which the charges, as signals, are not injected the outputs of said main path and said by-path being differentially detected as a signal.

Inventors

  • 👤 Y Itoh
  • 👤 H Sunami

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 04:40
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/891; G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C19/285

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 459 words
A charge coupled semiconductor element comprising: a semiconductor substrate of a first conductivity type; an insulating film disposed on one surface of said substrate; first means, coupled to said substrate, for injecting charges of a polarity opposing said first conductivity type into a portion of the surface of said substrate; a first electrode disposed on said insulating film, adjacent said first means; means for applying an input gate signal to said first electrode for transferring injected charges thereunder; a predetermined number of electrodes provided on said insulating film to which shift pulses are applied, disposed next to said first electrode; second means for applying multiple phase voltage pulses to respective ones of said predetermined number of electrodes to effect the sequential transfer of charges therebeneath; third means, coupled to sAid substrate, for deriving signals corresponding to charges which have been injected into said substrate and transported along the substrate surface portion beneath said predetermined number of electrodes by said second means; an output gate electrode, disposed adjacent said third means and said predetermined number of electrodes but being separated from said first electrode by said predetermined number of electrodes; means for applying an output gate signal to said output gate electrode for effecting the transfer of charges, which have been sequentially transferred beneath said predetermined number of electrodes, to said third means; and fourth means, coupled to said third means, for substantially eliminating noise component charges generated by the shifting of charges beneath said predetermined number of electrodes and said output gate electrode from the signals derived by said third means, comprising: an array of electrodes made up of a selected number of spaced apart electrodes disposed on said insulating film apart from said predetermined number of electrodes and respectively positioned opposite the last n number of electrodes of said predetermined number of electrodes, adjacent said output gate electrode, where n corresponds to the number of said multiple phase voltage pulses, an additional electrode, disposed on said insulating film but being spaced apart from and at a position opposite said output gate electrode, additional means, coupled to said substrate adjacent said additional electrode and spaced apart from and at a position opposite said third means, for deriving signals corresponding to noise component charges which have been transported along the substrate surface portion beneath said array of electrode and said additional electrode, means for electrically connecting said additional electrode to said output gate electrode, means for electrically connecting said selected number of electrodes respectively to said last n number of said predetermined number of electrodes, and means, connected to additional means and to said third means, for differentially combining the signals derived thereby, so as to substantially cancel said noise component charges from the signals derived by said third means.
Claim 2
Dependent Claim 459 words
A charge coupled semiconductor element comprising: a semiconductor substrate of a first conductivity type; an insulating film disposed on one surface of said substrate; first means, coupled to said substrate, for injecting charges of a polarity opposing said first conductivity type into a portion of the surface of said substrate; a first electrode disposed on said insulating film, adjacent said first means; means for applying an input gate signal to said first electrode for transferring injected charges thereunder; a predetermined number of electrodes provided on said insulating film to which shift pulses are applied, disposed next to said first electrode; second means for applying multiple phase voltage pulses to respective ones of said predetermined number of electrodes to effect the sequential transfer of charges therebeneath; third means, coupled to sAid substrate, for deriving signals corresponding to charges which have been injected into said substrate and transported along the substrate surface portion beneath said predetermined number of electrodes by said second means; an output gate electrode, disposed adjacent said third means and said predetermined number of electrodes but being separated from said first electrode by said predetermined number of electrodes; means for applying an output gate signal to said output gate electrode for effecting the transfer of charges, which have been sequentially transferred beneath said predetermined number of electrodes, to said third means; and fourth means, coupled to said third means, for substantially eliminating noise component charges generated by the shifting of charges beneath said predetermined number of electrodes and said output gate electrode from the signals derived by said third means, comprising: an array of electrodes made up of a selected number of spaced apart electrodes disposed on said insulating film apart from said predetermined number of electrodes and respectively positioned opposite the last n number of electrodes of said predetermined number of electrodes, adjacent said output gate electrode, where n corresponds to the number of said multiple phase voltage pulses, an additional electrode, disposed on said insulating film but being spaced apart from and at a position opposite said output gate electrode, additional means, coupled to said substrate adjacent said additional electrode and spaced apart from and at a position opposite said third means, for deriving signals corresponding to noise component charges which have been transported along the substrate surface portion beneath said array of electrode and said additional electrode, means for electrically connecting said additional electrode to said output gate electrode, means for electrically connecting said selected number of electrodes respectively to said last n number of said predetermined number of electrodes, and means, connected to additional means and to said third means, for differentially combining the signals derived thereby, so as to substantially cancel said noise component charges from the signals derived by said third means.
Claim 3
Dependent Claim 48 words
A charge coupled semiconductor element according to claim 1, which further including means, disposed between said last n number of electrodes and said array of electrodes, and between said output gate electrode and said additional electrode, for preventing the charges of said electrodes from flowing into each other.
Claim 4
Dependent Claim 40 words
A charge coupled semiconductor element according to claim 2, wherein said preventing means comprises a separation zone provided between said last n number of electrodes and said array of electrodes, and between said output gate electrode and said additional electrode.
Claim 5
Dependent Claim 77 words
A charge coupled semiconductor element according to claim 3, wherein said separation zone is composed of an insulating film layer, which is thicker than said insulating film under said last n number of electrodes, said output gate electrode, said array of electrodes and said additional electrode and which is provided on said semiconductor substrate surface between said last n number of electrodes and said array of electrodes, and between said output gate electrode and said additional electrode.
Claim 6
Dependent Claim 81 words
A charge coupled semiconductor element according to claim 3, wherein said separation zone is composed of an insulating film which is made of a material different from that of said insulating film under said last n number of electrodes, said output gate electrode, said array of electrodes and said additional electrode and which is provided on said semiconductor substrate between said last n number of electrodes and said array of electrodes, and between said output gate electrode and said additional electrode.
Claim 7
Dependent Claim 53 words
A charge coupled semiconductor element according to claim 3, wherein sAid separation zone is composed of a conductor layer which is provided on an insulating film on the semiconductor substrate interposed between said last n number of electrodes and said array of electrodes, and between said output gate electrode and said additional electrode.

References Cited (Backward Citations)

US3289089A Cited
US3463974A Cited
US3588635A Cited
US3678347A Cited
US3676711A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-06-03 1977-12-03 1978-06-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-06-03 1981-12-03 1982-06-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-06-03 1985-12-03 1986-06-04 $7700.00 Window Closed / Lapsed

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