Patent US3811953A successfully refreshed from Google Patents.
US3811953A
Expired / Lapsed
US
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Light-transmitting electrically conducting cadmium stannate and methods of producing same
Assignee: Wyeth Holdings LLC
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Filing: 1971-09-20
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Granted: 1974-05-21
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Expires: 1991-09-20
Abstract
Abstract Cadmium stannate (Cd2SnO4) is shown to provide a lighttransmitting electrically conducting composition in which the electrical conductivity can be varied from 10 7 ohm 1cm 1 to 104 ohm 1cm 1 by controlling the oxygen vacancy concentration of the material. Amorphous and crystalline films of Cd2SnO4 can be disposed on cold and/or hot substrates and they exhibit high optical transparency as well as high electrical conductivity. Other useful forms and configurations of semiconducting Cd2SnO4 are disclosed.
Inventors
- 👤 A Nozik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:24
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/833; C; C01; C01G; C01G19/00; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/086; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1343; G02F1/13439; H01; H01B; H01B1/00; H01B1/06; H01B1/08; H10F; H10F71/00; H10F71/138; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F77/244; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
23 words
placing the Cd2SnO4 target and a substrate on which Cd2SnO4 is to be deposited in a spluttering chamber containing an inert gas-O2 mixture;
Claim 2
Dependent Claim
23 words
placing the Cd2SnO4 target and a substrate on which Cd2SnO4 is to be deposited in a sputtering chamber containing an inert gas-O2 mixture;
Claim 3
Dependent Claim
17 words
The Cd2SnO4 of claim 1 having a conductivity ranging up to about 104ohm 1cm 1 at 25*C.
Claim 4
Dependent Claim
14 words
The Cd2SnO4 of claim 1 disposed on a supporting member as an amorphous film.
Claim 5
Dependent Claim
10 words
maintaining the substrate at a temperature above about 425*C.; and
Claim 6
Dependent Claim
9 words
maintaining the substrate at a temperature below 425*C.; and,
Claim 7
Dependent Claim
22 words
sputtering Cd2SnO4 onto the substrate whereby an amorphous film having a conductivity of at least about 10 1ohm 1cm 1 is obtained.
Claim 8
Dependent Claim
24 words
sputtering the Cd2SnO4 onto the substrate to obtain a crystalline film having a conductivety of at least about 10 1ohm 1cm 1 at 25*C.
Claim 9
Dependent Claim
20 words
The Cd2SnO4 of claim 3 wherein said film has a conductivity ranging up to about 104ohm 1cm 1 at 25*C.
Claim 10
Dependent Claim
14 words
The Cd2SnO4 of claim 1 disposed on a supporting member as a crystalline film.
Claim 11
Dependent Claim
10 words
The Cd2SnO4 of claim 1 having an orthorhombic crystalline structure.
Claim 12
Dependent Claim
13 words
The Cd2SnO4 of claim 1 in the form of a large single crystal.
Claim 13
Dependent Claim
7 words
Cd2SnO4 having a cubic spinel crystalline structure.
Claim 14
Dependent Claim
53 words
An electrically conductive light transmitting article which comprises Cd2SnO4 having the composition of claim 1 in the form of an n-type defect semiconductor disposed as an amorphous film on a supporting member characterized by having a specific resistive transmittance of greater than 15 percent for radiation of wavelength between 4,500 and 10,500 A.
Claim 15
Dependent Claim
61 words
Cd2SnO4 having the composition of claim 1 in the form of an n-type semiconductor disposed on a supporting member as a crystalline film having the property of being both electrically conductive and transparent to visible and near infra-red radiation, and characterized by having a specific resistive transmittance of greater than 15 percent for radiation of wavelength between 4,500 and 10,500 A.
Claim 16
Dependent Claim
18 words
A process for depositing a crystalline film of Cd2SnO4 transmissive to light on a supporting member which comprises:
Claim 17
Dependent Claim
27 words
Cd2SnO4 disposed on a supporting member as a film transmissive to light having a conductivity ranging from 10 1ohm 1cm 1 to 104ohm 1cm 1 at 25*C.
Claim 18
Dependent Claim
21 words
A microcrystalline powder which comprises electrically conductive Cd2SnO4 having a conductivity of at least about 10 1ohm 1cm 1 at 25*C.
Claim 19
Dependent Claim
15 words
A process for depositing an amorphous film of Cd2SnO4 on a supporting member which comprises:
Claim 20
Dependent Claim
27 words
The process of claim 14 wherein said inert gas concentration ranges from 100 to 0 percent by volume of said mixture whereby said film is made semiconductive.
Claim 21
Dependent Claim
35 words
The process of claim 14 for forming a crystalline film of Cd2SnO4 on a supporting member which comprises the additional step of heat treating an amorphous film of Cd2SnO4 at a temperature above about 700*C.
Claim 22
Dependent Claim
49 words
The process of claim 14 for forming an electrically conductive, light transmissive film of Cd2SnO4 on a supporting member which comprises the additional step of heating a supported film of Cd2SnO4 in a reducing environment at 100* to 500*C. for a period of from 1 minute to 1 hour.
Claim 23
Dependent Claim
86 words
A solar cell device comprising a photovoltaic p-n or semiconductor-metal junction sandwiched between at least two electrodes, one being Cd2SnO4 in the form of a transparent electrode film having a conductivity of at least 10 1ohm 1cm 1 in which the active junction components are immediately adjacent to the Cd2SnO4 electrode, the incident solar radiation passing through said transparent Cd2SnO4 electrode layer being absorbed in the active junction region of the solar cell and generating an electrical potential between the Cd2SnO4 electrode and the second electrode.
Claim 24
Dependent Claim
74 words
An electroluminescent device comprising an electroluminescent p-n or semiconductor-metal junction sandwiched between at least two electrodes, one being Cd2SnO4 in the form of a transparent electrode film having a conductivity of at least about 10 1ohm 1cm 1 at 25*C., in which the active junction components are immediately adjacent to said Cd2SnO4 electrode, the electrical excitation being applied across the two electrodes and the resulting electrically induced radiation passing through the transparent Cd2SnO4 electrode.
Claim 25
Dependent Claim
82 words
A photoconducting device comprising a photoconductive material sandwiched between at least two electrodes, at least one of said electrodes being Cd2SnO4 in the form of a film transparent to incident radiation in which the photoconductive material is contiguous to said Cd2SnO4 electrode whereby the incident radiation passing through said transparent Cd2SnO4 electrode layer is absorbed in said photoconductive material thereby lowering the resistance between said two electrodes, said Cd2SnO4 having a conductivity of at least about 10 1ohm 1cm 1 at 25*C.
Claim 26
Dependent Claim
64 words
A electrically heatable transparent article comprising an insulating, transparent supporting member which is coated with Cd2SnO4 having at least two cooperative electrical contacts separated from each other by said coating whereby an electrical current can be passed through the conductive Cd2SnO4 layer and thereby becomes capable of generating heat, said Cd2SnO4 having a conductivity of at least about 10 7ohm 1cm 1 at 25*C.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-05-20 | 1977-11-19 | 1978-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-05-20 | 1981-11-19 | 1982-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-05-20 | 1985-11-19 | 1986-05-21 | $7700.00 | Window Closed / Lapsed |