Patent US3810033A successfully refreshed from Google Patents.
US3810033A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Broad band high efficiency amplifier with improved band width
Assignee: Unisys Corp
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Filing: 1972-05-17
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Granted: 1974-05-07
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Expires: 1992-05-17
Abstract
Abstract An active high-efficiency-mode semiconductor diode is coupled to oscillating high frequency fields in a transmission line network for amplifying those electromagnetic fields, the apparatus taking the form of a single port high frequency device. The selected diode and the transmission line network provide means for elimination of time delayed triggering of undesired oscillations within the amplifier. Further, operating band width is increased by selection of a diode package that is anti-resonant at the second harmonic of the fundamental frequency signal being amplified, the diode itself reflecting small-signal negative resistance characteristics at that harmonic.
Inventors
- 👤 M Grace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:47
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/04; H03F3/10
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
292 words
A high frequency signal amplifier comprising: transmission line means having first and second high frequency conducting means, conductive wall means for short circuiting said transmission line means for high frequency currents, semiconductor diode package means including internal diode means, said semiconductor diode package means being characterized at the second harmonic of said high frequency signal by a series equivalent circuit representing said internal diode means parasitic lead inductance internal of said diode package at said second harmonic, the active junction capacitance of said internal diode means at said second harmonic, and the active semiconductor negative resistance of said internal diode means at said second harmonic, said semiconductor diode package means having a first conductive junction with said conductive wall means and a second conductive junction with said second high frequency conducting means, said first conductive junction with said conductive wall means forming a coaxial-to-radial line transition being characterized by an equivalent parallel resonant circuit whose series impedance is substantially infinity at said second harmonic of said high frequency signal, said semiconductor diode package means being antiresonant at said second harmonic, circuit means for applying a bias field across said semiconductor diode package means, distributed filter means cooperating with said first and second conducting means and providing an impedance step located at the plane of said second conductive junction for preventing time delayed triggered operation of said semiconductor diode package means, said distributed filter means comprising a geometrically symmetric filter having a low pass band and an upper stop band, said fundamental frequency falling in said low pass band and said harmonic frequency components in said upper stop band, and impedance matching means spaced from said filter means opposite said semiconductor diode package means and cooperating with said first and second conducting means.
Claim 2
Dependent Claim
292 words
A high frequency signal amplifier comprising: transmission line means having first and second high frequency conducting means, conductive wall means for short circuiting said transmission line means for high frequency currents, semiconductor diode package means including internal diode means, said semiconductor diode package means being characterized at the second harmonic of said high frequency signal by a series equivalent circuit representing said internal diode means parasitic lead inductance internal of said diode package at said second harmonic, the active junction capacitance of said internal diode means at said second harmonic, and the active semiconductor negative resistance of said internal diode means at said second harmonic, said semiconductor diode package means having a first conductive junction with said conductive wall means and a second conductive junction with said second high frequency conducting means, said first conductive junction with said conductive wall means forming a coaxial-to-radial line transition being characterized by an equivalent parallel resonant circuit whose series impedance is substantially infinity at said second harmonic of said high frequency signal, said semiconductor diode package means being antiresonant at said second harmonic, circuit means for applying a bias field across said semiconductor diode package means, distributed filter means cooperating with said first and second conducting means and providing an impedance step located at the plane of said second conductive junction for preventing time delayed triggered operation of said semiconductor diode package means, said distributed filter means comprising a geometrically symmetric filter having a low pass band and an upper stop band, said fundamental frequency falling in said low pass band and said harmonic frequency components in said upper stop band, and impedance matching means spaced from said filter means opposite said semiconductor diode package means and cooperating with said first and second conducting means.
Claim 3
Dependent Claim
43 words
Apparatus as described in claim 1 wherein: said transmission line means comprises substantially coaxial inner and outer conductor means, and said distributed filter means is located on said inner conductor means and defines an impedance step located at said semiconductor diode package means.
Claim 4
Dependent Claim
56 words
Apparatus as described in claim 2 wherein said transmission line means, said conductive wall means, said semiconductor diode package means, said bias circuit means, said impedance matching means, and said distributed filter means are so arranged and constructed as to provide high frequency electric fields with strong fundamental and harmonic frequency components across said semiconductor means.
References Cited (Backward Citations)
US3673510A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-05-06 | 1977-11-05 | 1978-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-05-06 | 1981-11-05 | 1982-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-05-06 | 1985-11-05 | 1986-05-07 | $7700.00 | Window Closed / Lapsed |