Patent US3806777A successfully refreshed from Google Patents.
US3806777A
Expired / Lapsed
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Visual optimization of light emitting diodes
Assignee: International Business Machines Corp
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Filing: 1972-07-03
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Granted: 1974-04-23
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Expires: 1992-07-03
Abstract
Abstract Disclosed is a multiplicity of discrete electrically interconnected light emitting diodes which produce light within the visible range of the spectrum and interconnected in such a manner so as to exhibit maximum uniform current density and brightness arranged in such proximity so that each said discrete light emitting diode is not discernible to the human eye.
Inventors
- 👤 H Edmonds
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:53
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/813; G; G09; G09F; G09F9/00; G09F9/30; G09F9/302; G09F9/3023; H10H20/83; H10H20/831
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
194 words
In a light emitting diode comprising a continuous active region being defined by area A located on a semiconductor substrate, said continuous active region defined by said area A and said semiconductor substrate constituting a continuous PN junction, a contact means connected to said continuous active region for receiving a current I for biasing said light emitting diode to a light emitting state, said continuous PN region defined by said area A being responsive to said current I for generating a maximum current density J, where J I/A, the improvement comprising: a. a plurality of inactive regions disposed and located within said area A for forming a plurality of spaced separated active subregions, the total combined area of each of said active subregions being equal to A'', said area A'' being less than said area A by a factor N, where NA'' A, b. each of said active subregions being connected to said contact means for receiving said current I, each of said active subregions being cumulatively responsive to said current I for generating a current density J'', where J'' I/A'' or J'' NJ, thus improving the quantum efficiency of said light emitting diode.
Claim 2
Dependent Claim
194 words
In a light emitting diode comprising a continuous active region being defined by area A located on a semiconductor substrate, said continuous active region defined by said area A and said semiconductor substrate constituting a continuous PN junction, a contact means connected to said continuous active region for receiving a current I for biasing said light emitting diode to a light emitting state, said continuous PN region defined by said area A being responsive to said current I for generating a maximum current density J, where J I/A, the improvement comprising: a. a plurality of inactive regions disposed and located within said area A for forming a plurality of spaced separated active subregions, the total combined area of each of said active subregions being equal to A'', said area A'' being less than said area A by a factor N, where NA'' A, b. each of said active subregions being connected to said contact means for receiving said current I, each of said active subregions being cumulatively responsive to said current I for generating a current density J'', where J'' I/A'' or J'' NJ, thus improving the quantum efficiency of said light emitting diode.
Claim 3
Dependent Claim
144 words
In a light emitting diode comprising a continuous active region being defined by area A located on a semiconductor substrate, said continuous active region defined by said area A and said semiconductor substrate constituting a continuous PN junction, a contact means connected to said continuous active region for receiving a current I for biasing said light emitting diode to a light emitting state, said continuous PN region defined by said area A being responsive to said current I for generating maximum current density J, where J I/A, the improvement as in claim 1 wherein: a. said plurality of inactive regions are disposed a predetermined distance from each other and are not resolved by the human eye and therefore generates a continuous solid visible light pattern to the human eye over said entire area A during energization of said active subregions by said current I.
Claim 4
Dependent Claim
130 words
In a light emitting diode comprising a continuous active region being defined by area A located on a semiconductor substrate, said continuous active region defined by said area A and said semiconductor substrate constituting a continuous PN junction, a contact means connected to said continuous active region for receiving a current I for biasing said light emitting diode to a light emitting state, said continuous PN region defined by said area A being responsive to said current I for generating maximum current density J, where J I/A, the improvement as in claim 1 wherein: a. said contact means comprise a segmented grid having a plurality of apertures therein, each perimeter of respective ones of said plurality of apertures being connected to the periphery of respective ones of said active subregions.
Claim 5
Dependent Claim
124 words
In a light emitting diode comprising a continuous active region being defined by area A located on a semiconductor sUbstrate, said continuous active region defined by said area A and said semiconductor substrate constituting a continuous PN junction, a contact means connected to said continuous active region for receiving a current I for biasing said light emitting diode to a light emitting state, said continuous PN region defined by said area A being responsive to said current I for generating maximum current density J, where J I/A, the improvement as in claim 3 wherein: a. said semiconductor substrate is a material selected from the group consisting of gallium arsenide phosphide, gallium aluminum arsenide, gallium phosphide, gallium nitride, aluminum arsenide, aluminum phosphide and aluminum nitride.
Claim 6
Dependent Claim
114 words
In a light emitting diode comprising a continuous active region being defined by area A located on a semiconductor substrate, said continuous active region defined by said area A and said semiconductor substrate constituting a continuous PN junction, a contact means connected to said continuous active region for receiving a current I for biasing said light emitting diode to a light emitting state, said continuous PN region defined by said area A being responsive to said current I for generating maximum current density J, where J I/A, the improvement as in claim 4 wherein: a. said semiconductor substrate comprises an N type material and each of said active subregions comprise a P type material.
References Cited (Backward Citations)
US3534231A
Cited
US3611064A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-04-22 | 1977-10-22 | 1978-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-04-22 | 1981-10-22 | 1982-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-04-22 | 1985-10-22 | 1986-04-23 | $7700.00 | Window Closed / Lapsed |