US3798513A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a surface parallel to the {8 100{9 {11 plane and a channel stopper parallel to the {8 111{9 {11 plane
Assignee: Hitachi Ltd
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Filing: 1970-12-01
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Granted: 1974-03-19
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Expires: 1990-12-01
Abstract
Abstract A semiconductor device having a parasitic channel stopper, in which a major surface of the semiconductor substrate lies in a plane parallel to a (100) plane; a predetermined portion of the major surface in which a parasitic channel is induced is converted into a (111) plane by etching the (100) plane; since the converted portion under a passivation film, such as silicon dioxide film is a substantially highly doped region (N ), it acts as a P parasitic channel stopper.
Inventors
- 👤 M Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:00
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10D99/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/115
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
189 words
A semiconductor device comprising a semiconductor substrate having a substantially plane major surface lying substantially parallel to (100) crystal plane, a semiconductor circuit element formed in a portion of said major surface with at least one semiconductor region defined by a PN junction from said substrate, any PN junction which constitutes said circuit element terminating at said major surface, means for effecting a channel stop comprising a cavity formed in another portion of said major surface apart from said semiconductor circuit element, and having a wall surface lying substantially parallel to a (111) crystal plane and a flat bottom surface lying substantially parallel to said major surface, an insulating film covering said major surface and the surface of said cavity, a first contact terminal for said semiconductor circuit element provided on said insulating film, a second contact terminal provided on another portion of said insulating film spaced from said first contact terminal, a conducting path provided on said insulating film so as to electrically connect said first contact terminal to said second contact terminal, said conducting path extending over the wall surface and the bottom surface of said cavity.
Claim 2
Dependent Claim
189 words
A semiconductor device comprising a semiconductor substrate having a substantially plane major surface lying substantially parallel to (100) crystal plane, a semiconductor circuit element formed in a portion of said major surface with at least one semiconductor region defined by a PN junction from said substrate, any PN junction which constitutes said circuit element terminating at said major surface, means for effecting a channel stop comprising a cavity formed in another portion of said major surface apart from said semiconductor circuit element, and having a wall surface lying substantially parallel to a (111) crystal plane and a flat bottom surface lying substantially parallel to said major surface, an insulating film covering said major surface and the surface of said cavity, a first contact terminal for said semiconductor circuit element provided on said insulating film, a second contact terminal provided on another portion of said insulating film spaced from said first contact terminal, a conducting path provided on said insulating film so as to electrically connect said first contact terminal to said second contact terminal, said conducting path extending over the wall surface and the bottom surface of said cavity.
Claim 3
Dependent Claim
19 words
A semiconductor device as defined in claim 1, wherein said cavity has a depth not less than 1 micron.
Claim 4
Dependent Claim
160 words
A semiconductor device comprising a semiconductor substrate having a substantially plane major surface lying substantially parallel to a (100) crystal plane, a semiconductor circuit element formed in a portion of said major surface with at least one semiconductor region defined by a PN junction terminating at said major surface, a projection formed on another portion of said major surface spaced from said semiconductor circuit element, and having a crystal plane lying substantially parallel to a (111) crystal plane, an insulating film covering said major surface and the surface of said projection, a first contact terminal for said semiconductor circuit element provided on said insulating film, a second contact terminal provided on another portion of said insulating film spaced from said first contact terminal, a conducting path provided on said insulating film so as to electrically connect said first contact terminal to said second contact terminal, said conducting path extending over at least a portion of the surface of said projection.
Claim 5
Dependent Claim
160 words
A semiconductor device comprising a semiconductor substrate having a substantially plane major surface lying substantially parallel to a (100) crystal plane, a semiconductor circuit element formed in a portion of said major surface with at least one semiconductor region defined by a PN junction terminating at said major surface, a projection formed on another portion of said major surface spaced from said semiconductor circuit element, and having a crystal plane lying substantially parallel to a (111) crystal plane, an insulating film covering said major surface and the surface of said projection, a first contact terminal for said semiconductor circuit element provided on said insulating film, a second contact terminal provided on another portion of said insulating film spaced from said first contact terminal, a conducting path provided on said insulating film so as to electrically connect said first contact terminal to said second contact terminal, said conducting path extending over at least a portion of the surface of said projection.
Claim 6
Dependent Claim
19 words
A semiconductor device as defined in claim 3, wherein said projection has a height not less than 1 micron.
Claim 7
Dependent Claim
177 words
A semiconductor device comprising a semiconductor substrate having a substantially plane major surface lying substnatially parallel to a (100) crystal plane, a semiconductor circuit element formed in a portion of said major surface with at least one semiconductor region defined by a PN junction terminating at said major surface, means for effecting a channel stop comprising a projection formed on another portion of said major surface spaced from said semiconductor circuit element and having a slanting surface lying substantially parallel to a (111) plane and a top surface lying substantially parallel to said major surface, an insulating film covering said major surface and the surface of said projection, a first contact terminal for said semiconductor circuit element provided on said insulating film, a second contact terminal provided on another portion of said insulating film spaced from said first contact terminal, a conducting path provided on said insulating film so as to electrically connect said first contact terminal to said second contact terminal, said conducting path extending over at least a portion of the surface of said projection.
Claim 8
Dependent Claim
177 words
A semiconductor device comprising a semiconductor substrate having a substantially plane major surface lying substnatially parallel to a (100) crystal plane, a semiconductor circuit element formed in a portion of said major surface with at least one semiconductor region defined by a PN junction terminating at said major surface, means for effecting a channel stop comprising a projection formed on another portion of said major surface spaced from said semiconductor circuit element and having a slanting surface lying substantially parallel to a (111) plane and a top surface lying substantially parallel to said major surface, an insulating film covering said major surface and the surface of said projection, a first contact terminal for said semiconductor circuit element provided on said insulating film, a second contact terminal provided on another portion of said insulating film spaced from said first contact terminal, a conducting path provided on said insulating film so as to electrically connect said first contact terminal to said second contact terminal, said conducting path extending over at least a portion of the surface of said projection.
Claim 9
Dependent Claim
19 words
A semiconductor device as defined in claim 5, wherein said projection has a height not less than 1 micron.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-18 | 1977-09-17 | 1978-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-18 | 1981-09-17 | 1982-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-18 | 1985-09-17 | 1986-03-19 | $7700.00 | Window Closed / Lapsed |