US3797102A
Expired / Lapsed
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Method of making semiconductor devices
Assignee: Motorola Solutions Inc
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Filing: 1966-01-07
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Granted: 1974-03-19
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Expires: 1986-01-07
Abstract
Abstract A monolithic integrated circuit structure is fabricated having a plurality of discrete single crystal semiconductor islands supported by and intimately bonded to a common substrate, including an insulating material to isolate the monocrystalline islands. The method of fabrication includes the steps of removing semiconductor material from selected areas of one side of a monocrystalline semiconductor body, replacing the removed material with an insulating layer and a support member, and then removing single crystal material from the opposite side of the wafer to expose portions of said insulating layer thereby providing monocrystalline islands for the fabrication therein of semiconductor devices.
Inventors
- 👤 T Huffman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:44
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/019; H10W10/041; H10W10/061; H10W10/10; H10W10/13; H10W10/181; H10W10/40; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/085; Y10S148/151
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
93 words
A method of forming a plurality of semiconductor devices in a monolithic integrated semiconductor structure comprising the steps of etching away portions of substrate supported, electrically isolated islands of monocrystalline semiconductor material so that the islands assume a cup-shaped form, epitaxially growing regions of monocrystalline semiconductor material of one type conductivity on the inner surfaces of the cups, forming at least one region of the opposite type conductivity in each of said epitaxially grown regions of monocrystalline semiconductor material, and forming individual electrical contacts to selected regions of said monolithic integrated semiconductor structure.
Claim 2
Independent Claim
93 words
A method of forming a plurality of semiconductor devices in a monolithic integrated semiconductor structure comprising the steps of etching away portions of substrate supported, electrically isolated islands of monocrystalline semiconductor material so that the islands assume a cup-shaped form, epitaxially growing regions of monocrystalline semiconductor material of one type conductivity on the inner surfaces of the cups, forming at least one region of the opposite type conductivity in each of said epitaxially grown regions of monocrystalline semiconductor material, and forming individual electrical contacts to selected regions of said monolithic integrated semiconductor structure.
Claim 3
Independent Claim
104 words
A method of forming a plurality of semiconductor devices in a monolithic integrated semiconductor structure comprising the steps of a. etching away portions of substrate supported, electrically isolated islands of monocrystalline semiconductor material so that each island so etched has a recess which assumes a cup-shaped form, b. epitaxially growing a region of monocrystalline semiconductor material of one type conductivity in such cup-shaped recess in an island, c. forming at least one region of the opposite type conductivity in said epitaxially grown region of monocrystalline semiconductor material in said island, and d. forming individual electrical contacts to selected regions of said monolithic semiconductor structure.
Claim 4
Independent Claim
104 words
A method of forming a plurality of semiconductor devices in a monolithic integrated semiconductor structure comprising the steps of a. etching away portions of substrate supported, electrically isolated islands of monocrystalline semiconductor material so that each island so etched has a recess which assumes a cup-shaped form, b. epitaxially growing a region of monocrystalline semiconductor material of one type conductivity in such cup-shaped recess in an island, c. forming at least one region of the opposite type conductivity in said epitaxially grown region of monocrystalline semiconductor material in said island, and d. forming individual electrical contacts to selected regions of said monolithic semiconductor structure.
Claim 5
Dependent Claim
73 words
In the method of claim 2, a. etching away a plurality of portions in a substrate supported electrically isolated island of monocrystalline semiconductor material to provide a corresponding plurality of recesses in that island with each of cup-shape, b. epitaxially growing a region of monocrystalline semiconductor material of one type conductivity in each said recess, and c. forming at least one region of the opposite type conductivity in each said epitaxially grown region.
Claim 6
Dependent Claim
31 words
In the method of claim 2 wherein the forming step (c) includes forming more than one region of the opposite type conductivity in said epitaxially grown region of monocrystalline semiconductor material.
Claim 7
Dependent Claim
58 words
In the method of claim 2 wherein epitaxially growing comprises the growing of a region of monocrystalline semiconductor material of one type conductivity in the cup-shaped recess in one island in such substrate and the growing of a region of monocrystalline semiconductor material of the opposite type conductivity in the cup-shaped recess in another island in such substrate.
Claim 8
Dependent Claim
46 words
In the method of claim 2 wherein the isolation for a substrate supported, electrically isolated island of monocrystalline semiconductor material is accomplished by silicon dioxide with a doping impurity therein, the step of causing said doping impurity to diffuse into monocrystalline semiconductor material in said island.
Claim 9
Independent Claim
152 words
A method of forming a plurality of semiconductor devices in a monolithic integrated semiconductor structure comprising the steps of a. etching away portions of substrate supported, electrically isolated islands of monocrystalline semiconductor material so that the islands assume a cup-shaped form, b. epitaxially growing a region of monocrystalline semiconductor material of one type conductivity on the inner surface of the cup of at least one island, c. epitaxially growing a region of monocrystalline semiconductor material of the opposite type conductivity on the inner surface of the cup for another island, d. forming at least one region in said epitaxially grown region in said one island and forming at least one region in said other island, each said one region being of opposite type conductivity to the tYpe conductivity of the epitaxially grown regions in said respective islands, and e. forming individual electrical contacts to selected regions of said monolithic integrated semiconductor structure.
Claim 10
Independent Claim
152 words
A method of forming a plurality of semiconductor devices in a monolithic integrated semiconductor structure comprising the steps of a. etching away portions of substrate supported, electrically isolated islands of monocrystalline semiconductor material so that the islands assume a cup-shaped form, b. epitaxially growing a region of monocrystalline semiconductor material of one type conductivity on the inner surface of the cup of at least one island, c. epitaxially growing a region of monocrystalline semiconductor material of the opposite type conductivity on the inner surface of the cup for another island, d. forming at least one region in said epitaxially grown region in said one island and forming at least one region in said other island, each said one region being of opposite type conductivity to the tYpe conductivity of the epitaxially grown regions in said respective islands, and e. forming individual electrical contacts to selected regions of said monolithic integrated semiconductor structure.
Claim 11
Independent Claim
104 words
A method of forming a plurality of semiconductor devices in a monolithic integrated semiconductor structure comprising the steps of a. etching away a portion of a substrate supported, electrically isolated island of monocrystalline semiconductor material so that such island so etched has a recess which assumes a cup-shaped form, b. epitaxially growing a plurality of adjacent regions of monocrystalline semiconductor material in such cup-shaped recess, c. providing each adjacent region in such cup-shaped recess of such island of an opposite conductivity type to the conductivity type of such adjacent region, and d. forming individual electrical contacts to selected regions of said monolithic semiconductor structure.
Claim 12
Independent Claim
104 words
A method of forming a plurality of semiconductor devices in a monolithic integrated semiconductor structure comprising the steps of a. etching away a portion of a substrate supported, electrically isolated island of monocrystalline semiconductor material so that such island so etched has a recess which assumes a cup-shaped form, b. epitaxially growing a plurality of adjacent regions of monocrystalline semiconductor material in such cup-shaped recess, c. providing each adjacent region in such cup-shaped recess of such island of an opposite conductivity type to the conductivity type of such adjacent region, and d. forming individual electrical contacts to selected regions of said monolithic semiconductor structure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-18 | 1977-09-17 | 1978-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-18 | 1981-09-17 | 1982-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-18 | 1985-09-17 | 1986-03-19 | $7700.00 | Window Closed / Lapsed |