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US3796931A
Expired / Lapsed
US
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P-n junction semiconductor device provided with an insulating layer having two stable resistance states
Assignee: Telefunken Electronic GmbH
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Filing: 1970-09-25
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Granted: 1974-03-12
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Expires: 1990-09-25
Abstract
Abstract A semiconductor device comprising a monocrystalline semiconductor body having at least two regions of different types of conductivity and an insulating layer which is provided at the surface of the semiconductor body and which consists of a material which can assume states of different resistance.
Inventors
- 👤 H Maute
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:52
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/366; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W74/00; H10W74/40; H10W74/43; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W72/851; H10W72/874; H10W72/884
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
165 words
A semiconductor device comprising: a monocrystalline semiconductor body having a plurality of regions of different types of conductivity forming pn junctions therebetween; a continuous insulating layer covering at least a portion of the surface of said semiconductor body overlying each of said regions, said insulating layer being directly provided on said surface of said semiconductor body and consisting of a material which is vitreous and which can assume an extremely high resistance state and an extremely low resistance state, each of said states being stable, said material being changeable from the high resistance state to the low re-sistance state by the application of a threshold voltage across it; and a respective metallic contact for each of said regions, each of said contacts being provided on the surface of said insulating layer over the respective one of said regions in the semiconductor body, said insulating layer being converted into the low resistance state between each said metallic contact and the respective one of said semiconductor regions.
Claim 2
Dependent Claim
165 words
A semiconductor device comprising: a monocrystalline semiconductor body having a plurality of regions of different types of conductivity forming pn junctions therebetween; a continuous insulating layer covering at least a portion of the surface of said semiconductor body overlying each of said regions, said insulating layer being directly provided on said surface of said semiconductor body and consisting of a material which is vitreous and which can assume an extremely high resistance state and an extremely low resistance state, each of said states being stable, said material being changeable from the high resistance state to the low re-sistance state by the application of a threshold voltage across it; and a respective metallic contact for each of said regions, each of said contacts being provided on the surface of said insulating layer over the respective one of said regions in the semiconductor body, said insulating layer being converted into the low resistance state between each said metallic contact and the respective one of said semiconductor regions.
Claim 3
Dependent Claim
17 words
A semiconductor device as claimed in claim 1, in which the vitreous material contains a glass-forming oxide.
Claim 4
Dependent Claim
16 words
A semiconductor device as claimed in claim 2, in which said glass-forming oxide is silicon dioxide.
Claim 5
Dependent Claim
16 words
A semiconductor device as claimed in claim 2, in which said glass-forming oxide is boron trioxide.
Claim 6
Dependent Claim
16 words
A semiconductor device as claimed in claim 2, in which said glass-forming oxide is phosphorus pentoxide.
Claim 7
Dependent Claim
43 words
A semiconductor device as claimed in claim 1, in which the vitreous material contains oxides of a metal which can assume different valency states. 7 A semiconductor device as claimed in claim 6, in which the vitreous material contains the oxides of copper.
Claim 8
Dependent Claim
18 words
A semiconductor device as claimed in claim 6, in which the vitreous material contains the oxides of tungsten.
Claim 9
Dependent Claim
72 words
A semiconductor device as claimed in claim 1 wherein: said semiconductor body contains first and second regions of different conductivity types with the pn junction formed therebetween extending to a major surface of said semiconductor body; said insulating layer covers at least said major surface; and at least one of said metallic contacts for said first and second regions is disposed on the surface of said insulating layer over said major surface.
Claim 10
Dependent Claim
69 words
A semiconductor device as claimed in claim 9 wherein: said first region extends to the major surface of said semiconductor body opposite said major surface to which said pn junction extends; said insulating layer covers at least a portion of said opposite major surface; and said metallic contact for said second region is disposed on the surface of the portion of said insulating layer over said opposite major surface.
Claim 11
Dependent Claim
20 words
A semiconductor device as defined in claim 1 wherein said insulating layer covers the entire surface of said semiconductor body.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-11 | 1977-09-10 | 1978-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-11 | 1981-09-10 | 1982-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-11 | 1985-09-10 | 1986-03-12 | $7700.00 | Window Closed / Lapsed |