US3795976A
Expired / Lapsed
US
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Method of producing semiconductor device
Assignee: Hitachi Ltd
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Filing: 1972-10-16
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Granted: 1974-03-12
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Expires: 1992-10-16
Abstract
Abstract A method of producing a semiconductor device provided with a composite passivating film having excellent moisture resistance and a small surface charge density and a small leakage current, which comprises the steps of: contacting a semiconductor wafer heated to a temperature lower than about 700* C. in an atmosphere containing oxygen and a vapor of a volatile organic silicon compound capable of decomposing at a temperature lower than 700* C. in order to deposit silicon dioxide on a free surface of the wafer; forming a tantalum pentoxide film in an oxygen containing atmosphere on the silicon dioxide film by a reactive sputtering of tantalum; and subjecting the wafer to a heat treatment in a non-reducing atmosphere at a temperature of about 200* to about 400* C.
Inventors
- 👤 Y Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6938; H10P14/6939; H10P14/69393; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/40; H10W74/43; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
19 words
A method according to claim 1, wherein said non-reducing atmosphere contains oxygen, nitrogen, an inert gas, or mixtures thereof.
Claim 2
Dependent Claim
14 words
A method according to claim 2, wherein said inert gas is helium or argon.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein said siliCon dioxide film is deposited to a thickness of less than about 1 Mu .
Claim 4
Dependent Claim
26 words
A method according to claim 4, wherein said silicon dioxide film is deposited to a thickness of between about 0.4 Mu to about 1 Mu .
Claim 5
Dependent Claim
24 words
A method according to claim 5, wherein said silicon dioxide film has a thickness of from about 0.4 Mu to about 0.95 Mu .
Claim 6
Dependent Claim
28 words
A method according to claim 1, wherein the sputtering of tantalum pentoxide is continued until the thickness of the tantalum pentoxide film is at least 0.2 Mu .
Claim 7
Dependent Claim
32 words
A method according to claim 1, wherein the sputtering of tantalum pentoxide is continued until the thickness of the tantalum pentoxide film is from about 0.2 Mu to about 0.7 Mu .
Claim 8
Dependent Claim
16 words
A method according to claim 1, wherein the silicon compound is monosilane, disilane or mixtures thereof.
Claim 9
Dependent Claim
47 words
A method according to claim 1, further comprising the step of forming a phosphorous glass layer consisting of a mixture of silicon dioxide and phosphorous pentoxide prior to the step of forming the tantalum pentoxide film, said tantalum pentoxide film being formed on said phosphorous glass layer.
Claim 10
Dependent Claim
22 words
A method according to claim 10, wherein said phosphorous glass layer is formed by depositing phosphorous pentoxide on said silicon oxide film.
Claim 11
Dependent Claim
19 words
A method according to claim 11, wherein said phosphorous pentoxide is deposited from an atmosphere containing PH3 or POCl3.
Claim 12
Dependent Claim
37 words
A method according to claim 10, wherein said phosphorous glass layer is formed by depositing a mixture of phosphorous pentoxide and silicon dioxide on said wafer from an atmosphere containing said silicon compound and PH3 or POCl3.
Claim 13
Dependent Claim
33 words
A method according to claim 1, wherein said silicon dioxide film is heat treated at a temperature of from about 700*C. to about 900*C. prior to the formation of the tantalum pentoxide film.
Claim 14
Dependent Claim
33 words
A method according to claim 10, wherein said phosphorous glass layer is heat treated at a temperature of from about 700*C. to about 900*C. prior to the formation of the tantalum pentoxide film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-11 | 1977-09-10 | 1978-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-11 | 1981-09-10 | 1982-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-11 | 1985-09-10 | 1986-03-12 | $7700.00 | Window Closed / Lapsed |