Patent US3795547A successfully refreshed from Google Patents.
US3795547A
Expired / Lapsed
US
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Method of improving electrical characteristics of high purity germanium or silicon
Assignee: General Electric Co
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Filing: 1972-12-13
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Granted: 1974-03-05
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Expires: 1992-12-13
Abstract
Abstract THE ELECTRICAL CONDUCTION PROPERTIES OF HIGH PURITY SEMICONDUCTOR MATERIAL PARTICULARLY WITH REGARD TO FREEDOM FROM LATTICE DEFECTS ARE IMPROVED BY HEATING OR ANNEALING A LARGE INGOT OF HIGH PURITY SEMICONDUCTOR IN A MOLTEN BATH OF SELECTED HIGH PURITY METAL OR METAL ALLOY AT ELEVATED TEMPERATURES FOR TIMES OF THE ORDER OF 400 TO 1000 HOURS.
Inventors
- 👤 R Hall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:39
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B29/08; C30B33/00; H; H10; H10P; H10P36/00; H10P36/03
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-04 | 1977-09-03 | 1978-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-04 | 1981-09-03 | 1982-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-04 | 1985-09-03 | 1986-03-05 | $7700.00 | Window Closed / Lapsed |