Patent US3792525A successfully refreshed from Google Patents.
US3792525A
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US
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Method of making a semiconductive signal translating device
Assignee: Motors Liquidation Co
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Filing: 1973-05-03
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Granted: 1974-02-19
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Expires: 1993-05-03
Abstract
Abstract An improved substrate material for semiconductor devices and methods for making same. The substrate includes a refractory like supporting layer coated with a high purity layer of reactively sputtered insulating material onto which a very high purity semiconductive layer is deposited. One device proposed for this substrate material is a diode assembly having an alumina substrate with a reactively sputtered layer of alumina on a major surface. A layer of P-type semiconductive material deposited on the sputtered layer and a P-N junction established in the layer.
Inventors
- 👤 Kinnon M Mc
- 👤 B Maciver
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:20
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/411; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/025; Y10S148/15; Y10S148/158; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
170 words
A method for making a semiconductive signal translating device which comprises: preparing a major surface of an alumina substrate wafer to receive a high purity layer of insulating material; reactively sputtering a high purity coating of alumina to a thickness of at least about 1,000 angstroms onto said major surface to provide an extremely pure composite substrate on which to deposit even thin layers of a semiconductor; depositing a layer of a semiconductor selected from the group consisting of germanium and silicon onto said coating of alumina, said semiconductor layer being of one conductivity type; diffusing at leAst one impurity of opposite conductivity type into said semiconductor layer to form a P-N junction which intersects an exposed surface of said semiconductor layer between two areas of opposite conductivity type; attaching ohmic contacts to each of said areas of opposite conductivity type; enclosing said substrate, said areas and said ohmic contacts; and attaching terminal leads to said ohmic contacts for low resistance electrical connection of external circuitry to said enclosed areas.
Claim 2
Independent Claim
170 words
A method for making a semiconductive signal translating device which comprises: preparing a major surface of an alumina substrate wafer to receive a high purity layer of insulating material; reactively sputtering a high purity coating of alumina to a thickness of at least about 1,000 angstroms onto said major surface to provide an extremely pure composite substrate on which to deposit even thin layers of a semiconductor; depositing a layer of a semiconductor selected from the group consisting of germanium and silicon onto said coating of alumina, said semiconductor layer being of one conductivity type; diffusing at leAst one impurity of opposite conductivity type into said semiconductor layer to form a P-N junction which intersects an exposed surface of said semiconductor layer between two areas of opposite conductivity type; attaching ohmic contacts to each of said areas of opposite conductivity type; enclosing said substrate, said areas and said ohmic contacts; and attaching terminal leads to said ohmic contacts for low resistance electrical connection of external circuitry to said enclosed areas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-18 | 1977-08-20 | 1978-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-18 | 1981-08-20 | 1982-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-18 | 1985-08-20 | 1986-02-19 | $7700.00 | Window Closed / Lapsed |