Patent US3791024A successfully refreshed from Google Patents.
US3791024A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of monolithic integrated circuits
Assignee: RCA Corp
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Filing: 1971-10-21
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Granted: 1974-02-12
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Expires: 1991-10-21
Abstract
Abstract A portion of a layer of monocrystalline silicon on a substrate is completely oxidized through to provide islands of silicon spaced apart by the portion of silicon dioxide. Spaced apart, thin layers of semiconductor material are provided on the silicon dioxide portion. Different semiconductor components are provided within the semiconductor islands and within the thin semiconductor layers. Preferably, the upper surfaces of the silicon islands and the silicon dioxide isolating portions are substantially coplanar, and connectors for the various components are disposed on these surfaces.
Inventors
- 👤 E Boleky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:13
CPC Classifications
H; H10; H10D; H10D88/00; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10D86/01; H10D86/03; H10D88/01; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/021; H10W10/061; H10W10/10; H10W10/181; H10W10/20; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/008; Y10S148/085; Y10S148/122; Y10S148/15
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
37 words
The method of claim 1 wherein said silicon dioxide portions project beyond said surface of said layer a distance in the order of 10,000 A, the thickness of said layer being in the order of 10,000 A.
Claim 2
Dependent Claim
18 words
The method of claim 1 wherein said surfaces of said islands and of said portions are substantially coplanar.
Claim 3
Dependent Claim
53 words
The method of claim 1 including the steps of: providing another of said thin layers of semiconductor material with a high doping concentration for good electrical conductivity thereof; providing an insulating coating on a portion of said another layer; and extending one of said connectors across said coated portion of said another layer.
Claim 4
Dependent Claim
35 words
The method of claim 1 wherein said step of forming said semiconductor components includes the simultaneous diffusion of a conductivity modifier into one of said islands of semiconductor material and into said one thin layer.
Claim 5
Dependent Claim
33 words
The method of claim 5 wherein said thin layer is of polycrystalline silicon, the depth of said diffusion into said layer being greater than the depth of said simultaneous diffusion into said island.
Claim 6
Independent Claim
144 words
A method of fabricating an integrated circuit in a body of semiconductor material having a surface, comprising the steps of: epitaxially depositing a layer of monocrystalline silicon onto said surface of said body; oxidizing portions of said layer to convert said portions thereof to silicon dioxide to thus provide at least two islands of silicon separated by said portions; providing on a surface of one of said portions of silicon dioxide, inwardly of the edges thereof, a thin layer of a semiconductor material; forming a semiconductor component within each of said two islands of silicon and forming a semiconductor component within said thin layer of semiconductor material; and providing electrical connectors for said components on surfaces of said islands and on a surface of said thin layer, some of said connector extending from said semiconductor islands onto surfaces of said portions of silicon dioxide.
Claim 7
Dependent Claim
32 words
The method of claim 7 wherein said oxidizing step is carried out for a time sufficient to convert the entire thickness of said portions of said monocrystalline silicon layer to silicon dioxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-11 | 1977-08-13 | 1978-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-11 | 1981-08-13 | 1982-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-11 | 1985-08-13 | 1986-02-12 | $7700.00 | Window Closed / Lapsed |