US3789301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for measuring the parameters of a transistor or other two-port device at microwave frequencies
Assignee: International Business Machines Corp
•
Filing: 1971-12-30
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Granted: 1974-01-29
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Expires: 1991-12-30
Abstract
Abstract A first sinusoidal signal at a microwave frequency is applied to the input port of a transistor while simultaneously therewith a second sinusoidal signal at the same frequency is applied to the output port. The magnitude and phase of the signals are adjusted to effect successively short-circuit and open-circuit conditions at the input and output ports. For each condition the magnitudes and phases of the incident and reflected waves are measured or determined at the ports. These measurements may then be used to compute four of the usual transistor parameters and to check the self-consistency of the measurement. A second set of measurements may then be made at a different microwave frequency to compute additional transistor parameters. The beta of the transistor may be directly measured at either microwave frequency.
Inventors
- 👤 S Malaviya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:08
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2608
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
74 words
A method of measuring the electrical parameters of a transistor having two ports and comprising the steps of applying to the two ports respective electrical signals, adjusting the magnitude and phase of the signal at a port to effect a load condition of a predetermined impedance at one port, measuring the magnitude and phase of the signal at said one port, and measuring the magnitude and phase of the signal at the other port.
Claim 2
Independent Claim
74 words
A method of measuring the electrical parameters of a transistor having two ports and comprising the steps of applying to the two ports respective electrical signals, adjusting the magnitude and phase of the signal at a port to effect a load condition of a predetermined impedance at one port, measuring the magnitude and phase of the signal at said one port, and measuring the magnitude and phase of the signal at the other port.
Claim 3
Dependent Claim
30 words
A method as set forth in claim 1 wherein said second-recited measuring step comprises measuring the magnitudes and phases of both the incident and reflected waves at said other port.
Claim 4
Dependent Claim
27 words
A method as set forth in claim 2 wherein said first-recited measuring step comprises measuring the magnitude and phase of the incident wave at said one port.
Claim 5
Dependent Claim
27 words
A method as set forth in claim 2 wherein said first-recited measuring step comprises measuring the magnitude and phase of the reflected wave at said one port.
Claim 6
Dependent Claim
36 words
A method as set forth in claim 1 wherein said electrical signals have a first frequency, and repeating said applying, adjusting and measuring steps with electrical signals of a second frequency different from said first frequency.
Claim 7
Dependent Claim
32 words
A method as set forth in claim 1 wherein said adjusting step comprises adjusting the magnitude and phase of the signal at a port to effect a short-circuit condition at one port.
Claim 8
Dependent Claim
32 words
A method as set forth in claim 1 wherein said adjusting step comprises adjusting the magnitude and phase of the signal at a port to effect an open-circuit condition at one port.
Claim 9
Independent Claim
96 words
A method of measuring the electrical parameters of a transistor having two ports and comprising the steps of applying to the two ports respective electrical signals of the same microwave frequency, successivley adjusting the magnitude and phase of the incident wave at a port to effect successive load conditions each of a predetermined impedance at one port, measuring the magnitude and phase of the signal at said one port for each of said conditions, and measuring the magnitudes and phases of both the incident and reflected waves at the other port for each of said conditions.
Claim 10
Independent Claim
96 words
A method of measuring the electrical parameters of a transistor having two ports and comprising the steps of applying to the two ports respective electrical signals of the same microwave frequency, successivley adjusting the magnitude and phase of the incident wave at a port to effect successive load conditions each of a predetermined impedance at one port, measuring the magnitude and phase of the signal at said one port for each of said conditions, and measuring the magnitudes and phases of both the incident and reflected waves at the other port for each of said conditions.
Claim 11
Dependent Claim
27 words
A method as set forth in claim 8 wherein said first-recited measuring step comprises measuring the magnitude and phase of the incident wave at said one port.
Claim 12
Dependent Claim
27 words
A method as set forth in claim 8 wherein said first-recited measuring step comprises measuring the magnitude and phase of the reflected wave at said one port.
Claim 13
Dependent Claim
33 words
A method as set forth in claim 8 wherein said adjusting step comprises adjusting the magnitude and phase of the incident wave at a port to effect a short-circuit condition at one port.
Claim 14
Dependent Claim
33 words
A method as set forth in claim 8 wherein said adjusting step comprises adjusting the magnitude and phase of the incident wave at a port to effect an open-circuit condition at one port.
Claim 15
Dependent Claim
29 words
A method as set forth in claim 8 and comprising repeating said applying, adjusting and measuring steps with electrical signals of a second frequency different from said first-recited frequency.
Claim 16
Independent Claim
85 words
A method of measuring the microwave parameters of a tranSistor or other two-port device and comprising the steps of applying to the two ports respective electrical sinusoidal signals of the same microwave frequency, adjusting the magnitude and phase of the signal at a port to effect a load condition of a predetermined impedance at one port, measuring the magnitude and phase of the signal at said one port, and measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 17
Independent Claim
85 words
A method of measuring the microwave parameters of a tranSistor or other two-port device and comprising the steps of applying to the two ports respective electrical sinusoidal signals of the same microwave frequency, adjusting the magnitude and phase of the signal at a port to effect a load condition of a predetermined impedance at one port, measuring the magnitude and phase of the signal at said one port, and measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 18
Dependent Claim
27 words
A method as set forth in claim 14 wherein said first-recited measuring step comprises measuring the magnitude and phase of the incident wave at said one port.
Claim 19
Dependent Claim
27 words
A method as set forth in claim 14 wherein said first-recited measuring step comprises measuring the magnitude and phase of the reflected wave at said one port.
Claim 20
Dependent Claim
33 words
A method as set forth in claim 14 wherein said adjusting step comprises adjusting the magnitude and phase of the incident wave at a port to effect a short-circuit condition at one port.
Claim 21
Dependent Claim
33 words
A method as set forth in claim 14 wherein said adjusting step comprises adjusting the magnitude and phase of the incident wave at a port to effect an open-circuit condition at one port.
Claim 22
Dependent Claim
29 words
A method as set forth in claim 14 and comprising repeating said applying, adjusting and measuring steps with electrical signals of a second frequency different from said first-recited frequency.
Claim 23
Independent Claim
89 words
A method of measuring the electrical parameters of a transistor or other two-port device and comprising the steps of applying to the two ports respective electrical signals of the same frequency, adjusting the magnitude and phase of the signal at either port to effect a load condition of a predetermined impedance at one port, measuring the magnitude and phase of either the incident wave or the reflected wave at said one port, and measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 24
Independent Claim
89 words
A method of measuring the electrical parameters of a transistor or other two-port device and comprising the steps of applying to the two ports respective electrical signals of the same frequency, adjusting the magnitude and phase of the signal at either port to effect a load condition of a predetermined impedance at one port, measuring the magnitude and phase of either the incident wave or the reflected wave at said one port, and measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 25
Independent Claim
82 words
A method of measuring the electrical parameters of a transistor or other two-port device and comprising the steps of applying to the two ports respective electrical signals of the same frequency, adjusting the magnitude and phase of the signal at either port to effect either a short-circuit or open-circuit condition at one port, measuring the magnitude and phase of the signal at said one port, and measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 26
Independent Claim
82 words
A method of measuring the electrical parameters of a transistor or other two-port device and comprising the steps of applying to the two ports respective electrical signals of the same frequency, adjusting the magnitude and phase of the signal at either port to effect either a short-circuit or open-circuit condition at one port, measuring the magnitude and phase of the signal at said one port, and measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 27
Independent Claim
91 words
A method of measuring the microwave parameters of a transistor or other two-port device and comprising the steps of applying to the two ports respective electrical sinusoidal signals of the same microwave frequency, adjusting the magnitude and phase of the incident wave at a port to effect either a short-circuit or open-circuit condition at one port, measuring the magnitude and phase of either the incident wave or the reflected wave at said one port, and measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 28
Independent Claim
91 words
A method of measuring the microwave parameters of a transistor or other two-port device and comprising the steps of applying to the two ports respective electrical sinusoidal signals of the same microwave frequency, adjusting the magnitude and phase of the incident wave at a port to effect either a short-circuit or open-circuit condition at one port, measuring the magnitude and phase of either the incident wave or the reflected wave at said one port, and measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 29
Dependent Claim
29 words
A method as set forth in claim 22 and comprising repeating said applying, adjusting and measuring steps with electrical signals of a second frequency different from said first-recited frequency.
Claim 30
Independent Claim
290 words
A method of measuring the microwave parameters of a transistor or other two-port device and comprising the steps of applying an electrical sinusoidal signal at a microwave frequency to a port of a two-port jig adapted to have mounted thereon the two-port device to be measured but not having said device mounted thereon, measuring the magnitudes and phases of the incident and reflected waves at said port, applying a signal at said frequency to the other port of said jig, measuring the magnitudes and phases of the incident and reflected waves at said other port, short-circuiting the input port of said jig to the output port thereof, applying a signal at said frequency to one port of said jig during said short-circuIt condition, measuring the magnitudes and phases of the incident wave at said one port and the transmitted wave at said other port, applying a signal at said frequency to the other port of said jig during said short-circuit condition, measuring the magnitudes and phases of the incident wave at said other port and the transmitted wave at said one port, mounting said two-port device on said jig to connect each port of the device to a respective one of the ports of the jig, applying signals at said frequency to the two ports of the jig simultaneously, adjusting the magnitude and phase of the signal at a port of the jig to effect a load condition of a predetermined impedance at one port of the device, measuring the magnitude and phase of the signal at the port of the jig connected to said one port of the device, and measuring the magnitudes and phases of both the incident and reflected waves at the other port of the jig.
Claim 31
Independent Claim
290 words
A method of measuring the microwave parameters of a transistor or other two-port device and comprising the steps of applying an electrical sinusoidal signal at a microwave frequency to a port of a two-port jig adapted to have mounted thereon the two-port device to be measured but not having said device mounted thereon, measuring the magnitudes and phases of the incident and reflected waves at said port, applying a signal at said frequency to the other port of said jig, measuring the magnitudes and phases of the incident and reflected waves at said other port, short-circuiting the input port of said jig to the output port thereof, applying a signal at said frequency to one port of said jig during said short-circuIt condition, measuring the magnitudes and phases of the incident wave at said one port and the transmitted wave at said other port, applying a signal at said frequency to the other port of said jig during said short-circuit condition, measuring the magnitudes and phases of the incident wave at said other port and the transmitted wave at said one port, mounting said two-port device on said jig to connect each port of the device to a respective one of the ports of the jig, applying signals at said frequency to the two ports of the jig simultaneously, adjusting the magnitude and phase of the signal at a port of the jig to effect a load condition of a predetermined impedance at one port of the device, measuring the magnitude and phase of the signal at the port of the jig connected to said one port of the device, and measuring the magnitudes and phases of both the incident and reflected waves at the other port of the jig.
Claim 32
Dependent Claim
39 words
A method as set forth in claim 24 wherein said adjusting step comprises adjusting the magnitude and phase of the signal at a port of the jig to effect a short-circuit condition at said one port of the device.
Claim 33
Dependent Claim
39 words
A method as set forth in claim 24 wherein said adjusting step comprises adjusting the magnitude and phase of the signal at a port of the jig to effect an open-circuit condition at said one port of the device.
Claim 34
Independent Claim
205 words
A method of measuring the microwave parameters of a transistor or other two-port device and comprising the steps of measuring the open-circuit loss and phase shift of a microwave frequency signal at each port of a two-port jig adapted to have mounted thereon the two-port device to be measured but not having said device mounted thereon, short-circuiting the input port of said jig to the output port thereof, measuring the transfer loss and phase shift of a signal at said microwave frequency applied successively to each port of the jig and transmitted to the other port thereof, mounting said two-port device on said jig to connect each port of the device to a respective one of the ports of the jig, applying signals at said frequency to the two ports of the jig simultaneously, adjusting the magnitude and phase of the signal at a port of the jig to effect a load condition of a predetermined impedance at one port of the device, measuring the magnitude and phase of the signal at the port of the jig connected to said one port of the device, and measuring the magnitudes and phases of both the incident and reflected waves at the other port of the jig.
Claim 35
Independent Claim
205 words
A method of measuring the microwave parameters of a transistor or other two-port device and comprising the steps of measuring the open-circuit loss and phase shift of a microwave frequency signal at each port of a two-port jig adapted to have mounted thereon the two-port device to be measured but not having said device mounted thereon, short-circuiting the input port of said jig to the output port thereof, measuring the transfer loss and phase shift of a signal at said microwave frequency applied successively to each port of the jig and transmitted to the other port thereof, mounting said two-port device on said jig to connect each port of the device to a respective one of the ports of the jig, applying signals at said frequency to the two ports of the jig simultaneously, adjusting the magnitude and phase of the signal at a port of the jig to effect a load condition of a predetermined impedance at one port of the device, measuring the magnitude and phase of the signal at the port of the jig connected to said one port of the device, and measuring the magnitudes and phases of both the incident and reflected waves at the other port of the jig.
Claim 36
Dependent Claim
38 words
A method as set forth in claim 27 wherein said adjusting step comprises adjusting the magnitude and phase of the signal at a port of the jig to effect a short-circuit condition at one port of the device.
Claim 37
Dependent Claim
38 words
A method as set forth in claim 27 wherein said adjusting step comprises adjusting the magnitude and phase of the signal at a port of the jig to effect an open-circuit condition at one port of the device.
Claim 38
Independent Claim
181 words
A method of measuring the microwave frequency parameters of a two-port device while mounted in a jig having two ports each connected to a respective one of the device ports, said method comprising the steps of applying a signal to one port of the jig with the device removed therefrom, simultaneously therewith measuring the magnitude and phase of the electrical waves incident to and reflected from said one port of the jig to determine the conditions at said one port of the jig to effect an open-circuit at the corresponding port of the device when the latter is mounted on the jig, mounting the device on the jig with the ports of the device connected to the respective ports of the jig, applying to the ports of the jig electrical sinusoidal signals of respective magnitudes and phases to reproduce said conditions at said one port of the jig to effect an open-circuit at the corresponding port of the device, and measuring the respective magniTudes and phases of the electrical waves incident to and reflected from the other port of the jig.
Claim 39
Independent Claim
181 words
A method of measuring the microwave frequency parameters of a two-port device while mounted in a jig having two ports each connected to a respective one of the device ports, said method comprising the steps of applying a signal to one port of the jig with the device removed therefrom, simultaneously therewith measuring the magnitude and phase of the electrical waves incident to and reflected from said one port of the jig to determine the conditions at said one port of the jig to effect an open-circuit at the corresponding port of the device when the latter is mounted on the jig, mounting the device on the jig with the ports of the device connected to the respective ports of the jig, applying to the ports of the jig electrical sinusoidal signals of respective magnitudes and phases to reproduce said conditions at said one port of the jig to effect an open-circuit at the corresponding port of the device, and measuring the respective magniTudes and phases of the electrical waves incident to and reflected from the other port of the jig.
Claim 40
Independent Claim
91 words
An apparatus for measuring the electrical parameters of a transistor having two ports and comprising means for supplying two electrical sinusoidal signals both at the same frequency, means for applying said signals respectively to the two ports, means for adjusting the magnitude and phase of the signal at a port to effect a load condition of a predetermined impedance at one port, means for measuring the magnitude and phase of the signal at said one port, and means for measuring the magnitude and phase of the signal at the other port.
Claim 41
Independent Claim
91 words
An apparatus for measuring the electrical parameters of a transistor having two ports and comprising means for supplying two electrical sinusoidal signals both at the same frequency, means for applying said signals respectively to the two ports, means for adjusting the magnitude and phase of the signal at a port to effect a load condition of a predetermined impedance at one port, means for measuring the magnitude and phase of the signal at said one port, and means for measuring the magnitude and phase of the signal at the other port.
Claim 42
Dependent Claim
23 words
An apparatus as set forth in claim 31 wherein said adjusting means comprises means to effect a short-circuit condition at said one port.
Claim 43
Dependent Claim
23 words
An apparatus as set forth in claim 31 wherein said adjusting means comprises means to effect an open-circuit condition at said one port.
Claim 44
Independent Claim
101 words
An apparatus for measuring the microwave parameters of a transistor or other two-port device and comprising means for supplying two electrical sinusoidal signals both at the same microwave frequency, means for applying said signals respectively to the two ports of the device, means for adjusting the magnitude and phase of the signal wave at a port to effect a load condition of a predetermined impedance at one port, means for measuring the magnitude and phase of the signal at said one port, and means for measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 45
Independent Claim
101 words
An apparatus for measuring the microwave parameters of a transistor or other two-port device and comprising means for supplying two electrical sinusoidal signals both at the same microwave frequency, means for applying said signals respectively to the two ports of the device, means for adjusting the magnitude and phase of the signal wave at a port to effect a load condition of a predetermined impedance at one port, means for measuring the magnitude and phase of the signal at said one port, and means for measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 46
Dependent Claim
24 words
An apparatus as set forth in claim 34 wherein said adjusting means com rises means to effect a short-circuit condition at said one port.
Claim 47
Dependent Claim
23 words
An apparatus as set forth in claim 34 wherein said adjusting means comprises means to effect an open-circuit condition at said one port.
Claim 48
Independent Claim
106 words
An apparatus for measuring the microwave parameters of a transistor or other two-port device and comprising means for supplying two electrical sinusoidal signals both at the same microwave frequency, means for applying said signals respectively to the two ports of the device, means for adjusting the magnitude and phase of the incident wave at a port to effect either a short-circuit or open-circuit condition at one port, means for measuring the magnitude and phase of either the incident wave or the reflected wave at said one port, and means for measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 49
Independent Claim
106 words
An apparatus for measuring the microwave parameters of a transistor or other two-port device and comprising means for supplying two electrical sinusoidal signals both at the same microwave frequency, means for applying said signals respectively to the two ports of the device, means for adjusting the magnitude and phase of the incident wave at a port to effect either a short-circuit or open-circuit condition at one port, means for measuring the magnitude and phase of either the incident wave or the reflected wave at said one port, and means for measuring the magnitudes and phases of both the incident and reflected waves at the other port.
Claim 50
Independent Claim
187 words
An apparatus for measuring the high-frequency parameters of a transistor or other two-port device and comprising a jig having two ports each adapted to be connected to a respective one of the device ports, means for applying a signal to one port of the jig with the device removed therefrom, means for measuring the magnitude and phase of the electrical waves incident to and reflected from said one port of the jig to determine the conditions at said one port of the jig to effect an open-circuit at the corresponding port of the device when the latter is mounted on the jig, means for mounting the device on the jig with the ports of the device connected to the respective ports of the jig, means for applying to the ports of the jig electrical sinusoidal signals of respective magnitudes and phases to reproduce said conditions at said one port of the jig to effect an open-circuit at the corresponding port of the device, and means for measuring the respective magnitudes and phases of the electrical waves incident to and reflected from the other port of the jig.
Claim 51
Independent Claim
187 words
An apparatus for measuring the high-frequency parameters of a transistor or other two-port device and comprising a jig having two ports each adapted to be connected to a respective one of the device ports, means for applying a signal to one port of the jig with the device removed therefrom, means for measuring the magnitude and phase of the electrical waves incident to and reflected from said one port of the jig to determine the conditions at said one port of the jig to effect an open-circuit at the corresponding port of the device when the latter is mounted on the jig, means for mounting the device on the jig with the ports of the device connected to the respective ports of the jig, means for applying to the ports of the jig electrical sinusoidal signals of respective magnitudes and phases to reproduce said conditions at said one port of the jig to effect an open-circuit at the corresponding port of the device, and means for measuring the respective magnitudes and phases of the electrical waves incident to and reflected from the other port of the jig.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-28 | 1977-07-30 | 1978-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-28 | 1981-07-30 | 1982-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-28 | 1985-07-30 | 1986-01-29 | $7700.00 | Window Closed / Lapsed |