Semiconductor device and method of producing the same
Abstract
Abstract A JUNCTION-TYPE FIELD EFFECT TRANSISTOR HAVING A SOURCE REGION, A DRAIN REGION AND A CARRIER PATH REGION OF N-TYPE FORMED BY DIFFUSING AN IMPURITY FROM ONE PRINCIPAL SURFACE OF A P-TYPE SILICON SUBSTRATE, A P-TYPE GATE REGION DIFFUSED BETWEEN THE SOURCE REGION AND THE DRAIN REGION SO AS TO DEFINE THE CARRIER PATH REGION, AND A HIGH-DOPED P+TYPE LAYER FORMED IN THE P-TYPE SILICON SUBSTRATE SURFACE DIRECTLY BENEATH THE SILICON OXIDE FILM IN ORDER TO ELIMINATE THE UNDESIRABLLE INFLUENCE EXERTED BY AN INVERTED LAYER INDUCED IN THE SUBSTRATE SURFACE BY THE OXIDE FILM. THE HIGH-DOPED P+TYPE LAYER IS CONTINUOUS WITH THE PTYPE GATE REGION AND IS FORMED SIMULTANEOUSLY WITH THE GATE REGION BY A SINGLE DIFFISION TREATMENT.
Inventors
- 👤 M Yamamoto
- 👤 K Kobayashi
- 👤 Y Ohashi
Bibliographic Details
Claims Analysis
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