Abstract 1. IN A METHOD OF MAKING SEMICONDUCTOR DEVICE THERE IS FORMED AN APPROXIMATELY 1U THICK P-CONDUCTIVITY TYPE SILICON POLYCRYSTAL THIN FILM LAYER HAVING IMPURITIES PCONDUCTIVITY TYPE BORON AND ELECTRICALLY NEUTRAL IV GROUP GERMANIUM IN A SPECIFIC REGION ON AN N-CONDUCTIVITY TY SILICON SINGLE CRYSTAL SUBSTRATE, THE SPECIFIC RESISTANCE OF WHICH IS 5 TO 10$ CM. A HEAT TREATMENT IS APPLIED TO THE SUBSTRATE AT A HIGH TEMPERATURE, TO THEREBY SIMULTANEOUSLY DIFFUSE THE BORON AND GERMANIUM IMPURITIES CONTAINED IN THE THIN FILM LAYER INTO THE SUBSTRATE, THUS FORMING A P-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION WHICH CAUSES LITTLE LATICE STRAIN. THEN PHOSPHORUS AND GERMANIUM ARE SIMULTANEOUSLY DIFFUSED INTO THE P-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION, FORMING AN N-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION CAUSING LITTLE LATTICE STRAIN.
IN A METHOD OF MAKING SEMICONDUCTOR DEVICE THERE IS FORMED AN APPROXIMATELY 1U THICK P-CONDUCTIVITY TYPE SILICON POLYCRYSTAL THIN FILM LAYER HAVING IMPURITIES PCONDUCTIVITY TYPE BORON AND ELECTRICALLY NEUTRAL IV GROUP GERMANIUM IN A SPECIFIC REGION ON AN N-CONDUCTIVITY TY SILICON SINGLE CRYSTAL SUBSTRATE, THE SPECIFIC RESISTANCE OF WHICH IS 5 TO 10$ CM. A HEAT TREATMENT IS APPLIED TO THE SUBSTRATE AT A HIGH TEMPERATURE, TO THEREBY SIMULTANEOUSLY DIFFUSE THE BORON AND GERMANIUM IMPURITIES CONTAINED IN THE THIN FILM LAYER INTO THE SUBSTRATE, THUS FORMING A P-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION WHICH CAUSES LITTLE LATICE STRAIN. THEN PHOSPHORUS AND GERMANIUM ARE SIMULTANEOUSLY DIFFUSED INTO THE P-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION, FORMING AN N-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION CAUSING LITTLE LATTICE STRAIN.
Claim 2
Dependent Claim
122 words
IN A METHOD OF MAKING SEMICONDUCTOR DEVICE THERE IS FORMED AN APPROXIMATELY 1U THICK P-CONDUCTIVITY TYPE SILICON POLYCRYSTAL THIN FILM LAYER HAVING IMPURITIES PCONDUCTIVITY TYPE BORON AND ELECTRICALLY NEUTRAL IV GROUP GERMANIUM IN A SPECIFIC REGION ON AN N-CONDUCTIVITY TY SILICON SINGLE CRYSTAL SUBSTRATE, THE SPECIFIC RESISTANCE OF WHICH IS 5 TO 10$ CM. A HEAT TREATMENT IS APPLIED TO THE SUBSTRATE AT A HIGH TEMPERATURE, TO THEREBY SIMULTANEOUSLY DIFFUSE THE BORON AND GERMANIUM IMPURITIES CONTAINED IN THE THIN FILM LAYER INTO THE SUBSTRATE, THUS FORMING A P-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION WHICH CAUSES LITTLE LATICE STRAIN. THEN PHOSPHORUS AND GERMANIUM ARE SIMULTANEOUSLY DIFFUSED INTO THE P-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION, FORMING AN N-CONDUCTIVITY TYPE IMPURITY DIFFUSION REGION CAUSING LITTLE LATTICE STRAIN.