Patent US3783045A successfully refreshed from Google Patents.
US3783045A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing discrete semiconductor devices or integrated circuits
Assignee: Individual
•
Filing: 1970-11-09
•
Granted: 1974-01-01
•
Expires: 1990-11-09
Abstract
Abstract IN A PROCESS FOR PREPARING SEIMCONDUCTOR DEVICES OF THE MOS TYPE, THE IMPROVEMENT WHEREIN THE NUMBER OF MASKINGS, AS WELL AS THE NUMBER OF OPERATIONS TO BE CARRIED OUT AT HIGH TEMPERATURES, IS REDUCED WITH RESPECT TO THE KNOWN PROCESSES, AND WHEREIN THE OXIDIZING OPERATIONS ARE ALTERNATED WITH DEPOSITIONS OF SILICON NITRIDE IN ORDER TO CONTROL THE THICKNESS OF THE GATE OXIDIZATION AND TO PROTECT THE DEVICE ANGAINST EXTERNAL AGENTS. THE DEVICES OBTAINED BY THE IMPROVED PROCESS ARE CHARACTERIZED IN THAT THEY HAVE A LAYER OF SILICON NITRIDE OVER THE THICK OXIDE, AT THE SAME LEVEL OF THE LAYER OF NITRIDE OVER THE GATE.
Inventors
- 👤 G Ronzi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:17
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-31 | 1977-07-02 | 1978-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-31 | 1981-07-02 | 1982-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-31 | 1985-07-02 | 1986-01-01 | $7700.00 | Window Closed / Lapsed |