Patent US3781977A successfully refreshed from Google Patents.
US3781977A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices
Assignee: FERRANT Ltd
•
Filing: 1971-09-08
•
Granted: 1974-01-01
•
Expires: 1991-09-08
Abstract
Abstract The formation of a contact individually on at least one selected region of a semiconductor body, such as is required in the manufacture of a read-only memory store, comprises providing on each selected region a layer of contact material on a layer of insulating material, and applying a potential between the contact material and the selected region to cause the contact material to penetrate through the layer of insulating material.
Inventors
- 👤 H Hulmes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:57
CPC Classifications
H; H10; H10P; H10P95/00; H10B; H10B20/00; H10D; H10D99/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
123 words
A method of manufacturing a semi-conductor device in a semiconductor body so as to have at least one contact on a selected region of the body which includes the steps of providing a single layer of insulating material on the selected region of said semiconductor body, reducing the thickness of the insulating material over the selected region, depositing a single layer of contact material on said layer of insulating material and over the reduced thickness portion, and applying a potential difference between opposite selected points of said layer of the contact material and the selected region of said semiconductor body to cause the contact material to penetrate through the layer of insulating material at the reduced thickness portion to form the desired contact.
Claim 2
Independent Claim
123 words
A method of manufacturing a semi-conductor device in a semiconductor body so as to have at least one contact on a selected region of the body which includes the steps of providing a single layer of insulating material on the selected region of said semiconductor body, reducing the thickness of the insulating material over the selected region, depositing a single layer of contact material on said layer of insulating material and over the reduced thickness portion, and applying a potential difference between opposite selected points of said layer of the contact material and the selected region of said semiconductor body to cause the contact material to penetrate through the layer of insulating material at the reduced thickness portion to form the desired contact.
Claim 3
Dependent Claim
78 words
A method of manufacturing a read-only memory store of the kind possessing a series of input lines intersected by a series of output lines with a storage cell in the form of a semiconductor device connected between the lines at each of a plurality of selected cross-over points of those lines, which includes manufacturing said semiconductor devices individually by a method as claimed in claim 1 to form a predetermined patteRn of storage cells in the semiconductor body.
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1 in which the insulating material is silicon oxide and the contact material is aluminium.
Claim 5
Dependent Claim
21 words
A method as claimed in claim 1 in which the insulating material is silicon oxide and the contact material is nichrome.
References Cited (Backward Citations)
US3634929A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-31 | 1977-07-02 | 1978-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-31 | 1981-07-02 | 1982-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-31 | 1985-07-02 | 1986-01-01 | $7700.00 | Window Closed / Lapsed |