Patent US3781133A successfully refreshed from Google Patents.
US3781133A
Expired / Lapsed
US
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Sputter ion pumps
Assignee: VEECO INSTRUMENTS ACQUISITION CORP
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Filing: 1972-03-06
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Granted: 1973-12-25
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Expires: 1992-03-06
Abstract
Abstract To increase the ionization in sputter ion pumps, a relatively high vapor pressure metal is provided which vaporizes when heated by the discharge, the vaporized atoms are ionized and accelerated to the sputtering electrode to enhance the sputtering action which in turn increases the pump speed.
Inventors
- 👤 L Hall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:42
CPC Classifications
H; H01; H01J; H01J41/00; H01J41/12; H01J41/18; H01J41/20
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
77 words
The method of enhancing the low pressure pumping mechanism of sputter ion pumps having a discharge and at least one reactive sputtering cathode comprising the steps of: A. heating a high yield atomic source of high vapor pressure material to produce atoms in the vapor phase; B. subjecting the vapor atoms to the pump discharge to cause ionization thereof; C. allowing said ions to bombard the reactive sputtering cathode thereby increasing the sputtering action of said cathode.
Claim 2
Independent Claim
77 words
The method of enhancing the low pressure pumping mechanism of sputter ion pumps having a discharge and at least one reactive sputtering cathode comprising the steps of: A. heating a high yield atomic source of high vapor pressure material to produce atoms in the vapor phase; B. subjecting the vapor atoms to the pump discharge to cause ionization thereof; C. allowing said ions to bombard the reactive sputtering cathode thereby increasing the sputtering action of said cathode.
Claim 3
Dependent Claim
55 words
The method of enhancing the low pressure pumping mechanism of sputter ion pumps having a discharge and at least one reactive sputtering cathode as described in claim 1 wherein the step of heating a high yield atomic source of high vapor pressure material to produce atoms in the vapor phase is accomplished by heating magnesium.
Claim 4
Dependent Claim
44 words
The method of enhancing the low pressure pumping mechanism of sputter ion pumps having a discharge and at least one reactive sputtering cathode as described in claim 1 wherein the high vapor pressure material is heated by subjecting said material to the pump discharge.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-24 | 1977-06-25 | 1977-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-24 | 1981-06-25 | 1981-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-24 | 1985-06-25 | 1985-12-25 | $7700.00 | Window Closed / Lapsed |