Patent US3780358A successfully refreshed from Google Patents.
US3780358A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide lasers
Assignee: International Standard Electric Corp
•
Filing: 1971-09-29
•
Granted: 1973-12-18
•
Expires: 1991-09-29
Abstract
Abstract A semiconductor injection laser device is provided with a narrow junction structure between layers of GaAs and GaAlAs which confines current flow and optical energy to minimize losses. Particular doping and layer growing techniques provide a central strip or ridge in the p-n junction extending between the end faces of the two layers. In one variation the junction crosses an intermediate GaAs layer between two outer GaA1As layers.
Inventors
- 👤 G Thompson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:33
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/821; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/30; H01S5/2054; H01S5/2059; H01S5/2234; H01S5/2237; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/05; Y10S148/065; Y10S148/067; Y10S148/072; Y10S148/145; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-17 | 1977-06-18 | 1977-12-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-17 | 1981-06-18 | 1981-12-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-17 | 1985-06-18 | 1985-12-18 | $7700.00 | Window Closed / Lapsed |