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US3775636A Expired / Lapsed US ⏱️ 0.0 years remaining

Direct view imaging tube incorporating velocity selection and a reverse biased diode sensing layer

Assignee: Westinghouse Electric Corp
•
Filing: 1971-06-21
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Granted: 1973-11-27
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Expires: 1991-06-21
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Abstract

Abstract A direct view imaging tube which incorporates a reversed biased diode array sensing structure for sensing input radiation to modulate a velocity selection type image section.

Inventors

  • 👤 F Mcnally

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 17:15
CPC Classifications
H; H01; H01J; H01J31/00; H01J31/08; H01J31/50; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/43; H01J2231/00; H01J2231/50; H01J2231/50005; H01J2231/5001; H01J2231/50015; H01J2231/505; H01J2231/5056

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 213 words
An image device comprising an input sensing member comprised of a wafer of semiconductive material of a first type of conductivity having an input and an output surface, a plurality of regions of semiconductive material of a second type of conductivity of opposite type conductivity to said first type on the output surface of said wafer and extending into said wafer a discrete distance and forming a plurality of junctions, said input sensing member exhibiting the property of generation of electron-hole pairs in response to incident radiation directed onto said input surface, means for reverse biasing said junction comprising a photoemissive element and means for electrically connecting the photoemissive element with each of said regions and means for illuminating said photoemissive elements, an output screen associateD with said photoemissive elements to generate a light image in response to the photoelectrons emitted from said photoemissive elements striking said output screen, a first grid positioned adjacent to said photo-emissive elements for accelerating the photo-electrons emitted from said photoemissive elements and a second grid positioned between said accelerating grid and said output screen for velocity selection of the photoelectrons emitted from said photoemissive elements and passing through said accelerator grid, said sensing member responsive to said input radiations to modify the potential of said photoemissive elements.
Claim 2
Dependent Claim 213 words
An image device comprising an input sensing member comprised of a wafer of semiconductive material of a first type of conductivity having an input and an output surface, a plurality of regions of semiconductive material of a second type of conductivity of opposite type conductivity to said first type on the output surface of said wafer and extending into said wafer a discrete distance and forming a plurality of junctions, said input sensing member exhibiting the property of generation of electron-hole pairs in response to incident radiation directed onto said input surface, means for reverse biasing said junction comprising a photoemissive element and means for electrically connecting the photoemissive element with each of said regions and means for illuminating said photoemissive elements, an output screen associateD with said photoemissive elements to generate a light image in response to the photoelectrons emitted from said photoemissive elements striking said output screen, a first grid positioned adjacent to said photo-emissive elements for accelerating the photo-electrons emitted from said photoemissive elements and a second grid positioned between said accelerating grid and said output screen for velocity selection of the photoelectrons emitted from said photoemissive elements and passing through said accelerator grid, said sensing member responsive to said input radiations to modify the potential of said photoemissive elements.
Claim 3
Dependent Claim 24 words
The device of claim 1 in which said means for electrically associating said photoemissive elements with said semiconductive region comprises an electrically conductive element.
Claim 4
Dependent Claim 65 words
The device of claim 1 in which said photoemissive element is provided on the inner surface of a faceplate member within an evacuated envelope, said sensing member is positioned exteriorly of said envelope and adjacent the outer surface of said faceplate and said means for electrically associating said photoemissive element with said semiconductive regions comprises a plurality of electrical conductive members extending through said faceplate.
Claim 5
Dependent Claim 12 words
The device of claim 1 in which said semiconductive material is silicon.
Claim 6
Dependent Claim 19 words
The device of claim 1 in which said semiconductive material is p-type silicon and said regions are n-type silicon.

References Cited (Backward Citations)

US2550316A Cited
US2888513A Cited
US3201630A Cited
US2903596A Cited
US2898499A Cited
US2945973A Cited
US3435234A Cited
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US3646390A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-11-26 1977-05-28 1977-11-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-11-26 1981-05-28 1981-11-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-11-26 1985-05-28 1985-11-27 $7700.00 Window Closed / Lapsed

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