Abstract Methods for producing a desired pattern of retained and removed portions in a substrate layer of a material selected from the group consisting of silicon nitride, an oxide of silicon, and an oxynitride of silicon are disclosed. One method includes providing a transfer layer of silicon over the substrate layer, producing a pattern of removed and retained regions in the transfer layer and then etching the portions of the substrate layer exposed by the removed portions in the transfer layer with an etchant which etches the substrate layer without substantially etching the transfer layer to produce a pattern in the substrate layer substantially corresponding to that in the transfer layer. Other materials useful for transfer layers such as molybdenum, tungsten, nickel, chromium, and magnesium are also disclosed. Typical etchants for the various materials are also disclosed.
A method of producing a desired pattern of removed portions in a substrate layer comprising the steps of providing a substrate layer of a material selected from the group consisting of silicon nitride, an oxide of silicon, and an oxynitride of silicon providing a transfer layer of silicon over said substrate layer; producing a pattern of removed and retained regions in said transfer layer; and etching portions of said substrate layer exposed by the removed portions in said transfer layer with a solution of hydrofluoric acid to produce a pattern in said substrate layer substantially corresponding to that in said transfer layer.
Claim 2
Dependent Claim
12 words
The method of claim 2 wherein said substrate layer comprises silicon nitride.
Claim 3
Dependent Claim
14 words
The method of claim 2 wherein said substrate layer comprises an oxide of silicon.
Claim 4
Dependent Claim
58 words
The method of claim 2 wherein the step of providing a pattern in said transfer layer includes providing a photoresist material over said transfer layer, photolithographically producing a pattern of removed and retained regions in said photoresist layer and etching to remove the portions of said transfer layer exposed by said pattern in said layer of photoresist material.