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US3772097A
Expired / Lapsed
US
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Epitaxial method for the fabrication of a distributed semiconductor power supply containing a decoupling capacitor
Assignee: Motorola Solutions Inc
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Filing: 1970-07-13
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Granted: 1973-11-13
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Expires: 1990-07-13
Abstract
Abstract A monolithic semiconductor structure and method of making same and in which structure supply voltages are distributed through adjacent P and N type layers to surface regions of the structure. These voltages are available for integrated circuits and other devices which are constructed in the surface regions of the structure. Good capacitive decoupling is provided between the P and N layers used to distribute voltages and a relatively high capacitive reactance at the surface region prevents AC short circuits at high frequencies.
Inventors
- 👤 S Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:34
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/211; H10D89/311; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/145; Y10S148/151; Y10S438/00; Y10S438/901
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
66 words
The process as recited in claim 1 further including the steps of diffusing a plurality of relatively low resistivity seventh regions of said second conductivity type in said surface of said semiconductor substrate after diffusing said first region, said plurality of seventh regions forming a castellated segment of said PN junction between said semiconductor substrate and said first layer, increasing the area of said PN junction.
Claim 2
Dependent Claim
18 words
The process as recited in claim 1 wherein said first, second, third, and fifth regions form continuous bands.
Claim 3
Dependent Claim
19 words
The process as recited in claim 2 wherein each of said plurality of seventh regions form continuous, concentric bands.
Claim 4
Dependent Claim
78 words
The process as recited in claim 1 wherein the resistivities of said first, second, third and fifth regions range from 0.01 to 0.1 ohm-centimeters, and the resistivities of said fourth and sixth regions range from 0.1 to 0.5 ohm-centimeters, and the resistivity of said first layer ranges from 0.01 to 0.5 ohm-centimeters, and the resistivity of said second layer ranges from 1.0 to 5.0 ohm-centimeters, and the resistivity of said third layer ranges from 1.0 to 10.0 ohm-centimeters.
References Cited (Backward Citations)
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Cited
US3381188A
Cited
US3327182A
Cited
US3430110A
Cited
US3404450A
Cited
US3423650A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-12 | 1977-05-14 | 1977-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-12 | 1981-05-14 | 1981-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-12 | 1985-05-14 | 1985-11-13 | $7700.00 | Window Closed / Lapsed |