US3769561A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Current limiting integrated circuit
Assignee: United States Department of the Navy
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Filing: 1972-02-24
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Granted: 1973-10-30
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Expires: 1992-02-24
Abstract
Abstract An integrated circuit having a laminated bipolar transistor with multi-emitters respectively serially connected to a plurality of deep depletion field effect transistors and/or inversion channel field effect transistors. The integrated circuit has a common layer functioning as both the drain of one of the field effect transistors and an emitter of the bipolar transistor. In operation the field effect transistors conduct currents in series with the respective emitters of the bipolar transistor. In addition the field effect transistors provide ballasting by limiting the current therethrough.
Inventors
- 👤 J White
- 👤 R Amantea
- 👤 H Becke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:30
CPC Classifications
H; H10; H10D; H10D88/00; H02; H02H; H02H9/00; H02H9/02; H02H9/025; H03; H03F; H03F1/00; H03F1/52; H03F3/00; H03F3/20; H03F3/21; H03F3/213; H03G; H03G11/00; H03G11/002; H10D84/00; H10D84/01; H10D84/0107; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401; H10D84/403; H10D84/406; H10D84/80; H10D84/87
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
192 words
A current limiting device comprising: a laminate having first, second and third layers, said first and third layers being of a first conductivity type and said second layer being of a second conductivity type and contiguous with said first layer; a plurality of first, second and third elements contiguous with each other interposed between said second and third layers, said first and second elements being contiguous with said third layer and one being of said second conductivity type, said second and third elements being interposed between said first element and said second layer, said third element being contiguous with said second layer and of said first conductivity type; an insulator contiguously interposed between said second layer and both said third layer and said second element; whereby said first and second layers form collector and base electrodes, respectively, for a multi-emitter transistor, said third layer forms a common source electrode for each of a plurality of field effect transistors, said first and second elements form current channels and gates, respectively, of said field effect transistors, and said third elements commonly form drains of said field effect transistors and emitters of said multi-emitter transistor.
Claim 2
Dependent Claim
192 words
A current limiting device comprising: a laminate having first, second and third layers, said first and third layers being of a first conductivity type and said second layer being of a second conductivity type and contiguous with said first layer; a plurality of first, second and third elements contiguous with each other interposed between said second and third layers, said first and second elements being contiguous with said third layer and one being of said second conductivity type, said second and third elements being interposed between said first element and said second layer, said third element being contiguous with said second layer and of said first conductivity type; an insulator contiguously interposed between said second layer and both said third layer and said second element; whereby said first and second layers form collector and base electrodes, respectively, for a multi-emitter transistor, said third layer forms a common source electrode for each of a plurality of field effect transistors, said first and second elements form current channels and gates, respectively, of said field effect transistors, and said third elements commonly form drains of said field effect transistors and emitters of said multi-emitter transistor.
Claim 3
Dependent Claim
15 words
A current limiting device according to claim 1 wherein said insulator comprises silicon dioxide material.
Claim 4
Dependent Claim
22 words
A current limiting device according to claim 2 wherein: said first conductivity type is N; and said second conductivity type is P.
Claim 5
Dependent Claim
18 words
A current limiting device according to claim 3 wherein said first element is of said first conductivity type.
References Cited (Backward Citations)
US3488835A
Cited
US3519898A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-29 | 1977-04-30 | 1977-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-29 | 1981-04-30 | 1981-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-29 | 1985-04-30 | 1985-10-30 | $7700.00 | Window Closed / Lapsed |