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Surface inversion solar cell and method of forming same

Assignee: Comsat Corp
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Filing: 1971-12-03
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Granted: 1973-10-30
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Expires: 1991-12-03
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Abstract

Abstract An improved semiconductor device, particularly suitable as a solar cell, has a surface inversion layer with increased charge density. A p-type semiconductor material is covered with a layer comprising oxides of silicon and chromium. The addition of the chromium oxides increases the charge density of the inversion layer by orders of magnitude over that created by the silicon oxide alone. In the fabrication process, a silicon oxide layer is formed first, followed by a layer of elemental chromium. Both layers are oxidized by placing the device in an oxygen atmosphere at temperatures in excess of 800* C.

Inventors

  • 👤 J Lindmayer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 10:08
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/18; H10D; H10D99/00; H10F10/12; H10F10/14; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y10; Y10S; Y10S148/00; Y10S148/033

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 25 words
A semiconductor device as claimed in claim 1 wherein said device further comprises metallic contacts in direct contact with the surface of said semiconductor material.
Claim 2
Dependent Claim 24 words
A semiconductor device as claimed in claim 2, wherein said metallic contacts comprise a metal which forms a Schottky junction with said semiconductor layer.
Claim 3
Dependent Claim 17 words
A semiconductor device as claimed in claim 3 wherein said semiconductor layer is a layer of silicon.
Claim 4
Dependent Claim 17 words
A semiconductor device as claimed in claim 2 wherein said semiconductor layer is a layer of silicon.
Claim 5
Dependent Claim 20 words
A semiconductor device as claimed in claim 4 wherein said covering layer is between 800 A and 1,000 A thick.

References Cited (Backward Citations)

US3457470A Cited
US3396052A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-10-29 1977-04-30 1977-10-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-10-29 1981-04-30 1981-10-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-10-29 1985-04-30 1985-10-30 $7700.00 Window Closed / Lapsed

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