US3769558A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface inversion solar cell and method of forming same
Assignee: Comsat Corp
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Filing: 1971-12-03
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Granted: 1973-10-30
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Expires: 1991-12-03
Abstract
Abstract An improved semiconductor device, particularly suitable as a solar cell, has a surface inversion layer with increased charge density. A p-type semiconductor material is covered with a layer comprising oxides of silicon and chromium. The addition of the chromium oxides increases the charge density of the inversion layer by orders of magnitude over that created by the silicon oxide alone. In the fabrication process, a silicon oxide layer is formed first, followed by a layer of elemental chromium. Both layers are oxidized by placing the device in an oxygen atmosphere at temperatures in excess of 800* C.
Inventors
- 👤 J Lindmayer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 03:06
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/18; H10D; H10D99/00; H10F10/12; H10F10/14; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y10; Y10S; Y10S148/00; Y10S148/033
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
25 words
A semiconductor device as claimed in claim 1 wherein said device further comprises metallic contacts in direct contact with the surface of said semiconductor material.
Claim 2
Dependent Claim
24 words
A semiconductor device as claimed in claim 2, wherein said metallic contacts comprise a metal which forms a Schottky junction with said semiconductor layer.
Claim 3
Dependent Claim
17 words
A semiconductor device as claimed in claim 3 wherein said semiconductor layer is a layer of silicon.
Claim 4
Dependent Claim
17 words
A semiconductor device as claimed in claim 2 wherein said semiconductor layer is a layer of silicon.
Claim 5
Dependent Claim
20 words
A semiconductor device as claimed in claim 4 wherein said covering layer is between 800 A and 1,000 A thick.
References Cited (Backward Citations)
US3457470A
Cited
US3396052A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-29 | 1977-04-30 | 1977-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-29 | 1981-04-30 | 1981-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-29 | 1985-04-30 | 1985-10-30 | $7700.00 | Window Closed / Lapsed |