US3767982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implantation field-effect semiconductor devices
Assignee: Individual
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Filing: 1972-08-04
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Granted: 1973-10-23
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Expires: 1992-08-04
Abstract
Abstract Field-effect semiconductor device comprising a wafer of semiconductor material of one type of conductivity, a drain electrode on one surface of said wafer, an implantation metal mask on the other surface thereof, said mask having solid zones and openings, and a plurality of conducting channels perpendicular to said drain electrode and mask and positioned beneath the mask solid zones. A buried gate region is devised by implantation of doping ions of opposite type of conductivity to wafer conductivity and a buried insulating region adjacent to said gate region is devised by implantation of non-doping ions. A diffused region of the opposite type of conductivity to wafer conductivity extends to the implanted gate region. The implantation mask has two separate parts, the first covering the diffused region and serving as the gate electrode and the second covering the conducting channel positions and serving as the source electrode.
Inventors
- 👤 S Teszner
- 👤 D Lecrosnier
- 👤 G Pelous
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 14:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/83; H10D30/831; H10P; H10P95/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
201 words
A field-effect semiconductor device comprising of wafer of semiconductor material of one type of conductivity, a drain electrode on one surface of said wafer, an implantation conductive metal mask on the other surface thereof, said mask having solid zones in the form of parallel bars and a frome surrounding said bars and openings, a plurality of conducting channels perpEndicular to said drain electrode and mask and positioned beneath the solid zones of the mask in the form of parallel bars, an implanted buried gate region formed through the mask opening by implantation of doping ions of the opposite type of conductivity to the wafer conductivity, an implanted buried insulating region between said gate region and said other surface and formed through the mask openings by implantation of nondoping ions which turn the semi-conductor material into a semiinsulator, a diffused region of the opposite type of conductivity to the wafer conductivity, located under the frame of the mask and extending to the implanted buried gate region, said implantation mask having two separate parts, a gate electrode part covering said diffused region in the form of a frame and a source electrode part covering the conducting channels in the form of parallel bars.
Claim 2
Dependent Claim
201 words
A field-effect semiconductor device comprising of wafer of semiconductor material of one type of conductivity, a drain electrode on one surface of said wafer, an implantation conductive metal mask on the other surface thereof, said mask having solid zones in the form of parallel bars and a frome surrounding said bars and openings, a plurality of conducting channels perpEndicular to said drain electrode and mask and positioned beneath the solid zones of the mask in the form of parallel bars, an implanted buried gate region formed through the mask opening by implantation of doping ions of the opposite type of conductivity to the wafer conductivity, an implanted buried insulating region between said gate region and said other surface and formed through the mask openings by implantation of nondoping ions which turn the semi-conductor material into a semiinsulator, a diffused region of the opposite type of conductivity to the wafer conductivity, located under the frame of the mask and extending to the implanted buried gate region, said implantation mask having two separate parts, a gate electrode part covering said diffused region in the form of a frame and a source electrode part covering the conducting channels in the form of parallel bars.
Claim 3
Dependent Claim
202 words
A field-effect semiconductor devide comprising a wafer of semiconductor material of one type of conductivity, a drain electrode on one surface of said wafer, an implantation conductive metal mask on the other surface thereof, said mask having solid zones in the form of a central portion and discrete discs surrounding said central portion and openings, a plurality of conducting channels perpendicular to said drain electrode and mask and positioned beneath the solid zones of the mask in the form of discrete discs, an implanted buried gate region formed through the mask openings by implantation of doping ions of the opposite type of conductivity to the wafer conductivity, an implanted buried insulating region between said gate region and said other surface and formed through the mask openings by implantation of non-doping ions which turn the semi-conductor material into a semi-insulator, a diffused region of the opposite type of conductivity to the wafer conductivity, located under the central portion of the mask and extending to the implanted buried gate region, said implantation mask having two separate parts, a gate electrode part covering said diffused region under said central portion and a source electrode part covering the conducting channels in the form of discrete discs.
Claim 4
Dependent Claim
202 words
A field-effect semiconductor devide comprising a wafer of semiconductor material of one type of conductivity, a drain electrode on one surface of said wafer, an implantation conductive metal mask on the other surface thereof, said mask having solid zones in the form of a central portion and discrete discs surrounding said central portion and openings, a plurality of conducting channels perpendicular to said drain electrode and mask and positioned beneath the solid zones of the mask in the form of discrete discs, an implanted buried gate region formed through the mask openings by implantation of doping ions of the opposite type of conductivity to the wafer conductivity, an implanted buried insulating region between said gate region and said other surface and formed through the mask openings by implantation of non-doping ions which turn the semi-conductor material into a semi-insulator, a diffused region of the opposite type of conductivity to the wafer conductivity, located under the central portion of the mask and extending to the implanted buried gate region, said implantation mask having two separate parts, a gate electrode part covering said diffused region under said central portion and a source electrode part covering the conducting channels in the form of discrete discs.
Claim 5
Dependent Claim
216 words
A field-effect semiconductor device comprising a wafer of semiconductor material of one type of conductivity, a drain electrode on one surface of said wafer, an implantation conductive metal mask on the other surface thereof, said mask having openings and solid zones in the form of parallel bars and an incomplete three side frame, a plurality of conducting channels perpendicular to said drain electrode and mask and positioned beneath the solid zones of the mask in the form of parallel bars, an implanted buried gate region formed through the mask openings by implantation of doping ions of the opposite type of conductivity to the wafer conductivity, an implanted buried insulating region between said gate region and said other surface and formed through the mask openings by implantation of non-doping ions which turn the semiconductor material into a seim-insulator, a diffused region of the opposite type of conductivity to the wafer conductivity, located under the incomplete three side frame of the mask and extending to the implanted buried gate region, said implantation mask having two separate parts, a gate electrode part covering said diffused region in the form of an incomplete three side frame and a source electrode part covering the conducting channels in the form of parallel bars and a general bar connecting therebetween the parallel bars.
Claim 6
Dependent Claim
216 words
A field-effect semiconductor device comprising a wafer of semiconductor material of one type of conductivity, a drain electrode on one surface of said wafer, an implantation conductive metal mask on the other surface thereof, said mask having openings and solid zones in the form of parallel bars and an incomplete three side frame, a plurality of conducting channels perpendicular to said drain electrode and mask and positioned beneath the solid zones of the mask in the form of parallel bars, an implanted buried gate region formed through the mask openings by implantation of doping ions of the opposite type of conductivity to the wafer conductivity, an implanted buried insulating region between said gate region and said other surface and formed through the mask openings by implantation of non-doping ions which turn the semiconductor material into a seim-insulator, a diffused region of the opposite type of conductivity to the wafer conductivity, located under the incomplete three side frame of the mask and extending to the implanted buried gate region, said implantation mask having two separate parts, a gate electrode part covering said diffused region in the form of an incomplete three side frame and a source electrode part covering the conducting channels in the form of parallel bars and a general bar connecting therebetween the parallel bars.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-22 | 1977-04-23 | 1977-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-22 | 1981-04-23 | 1981-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-22 | 1985-04-23 | 1985-10-23 | $7700.00 | Window Closed / Lapsed |