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US3766638A Expired / Lapsed US ⏱️ 0.0 years remaining

Wafer spreader

Assignee: Hugle Ind Inc
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Filing: 1972-01-03
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Granted: 1973-10-23
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Expires: 1992-01-03
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Abstract

Abstract A method for separating pieces (dies) of a semiconductor wafer in which the wafer is attached to a vinyl film, scribed, broken, and the film stretched in all radial dimensions. A plunger-type device having a rounded chamfer in contact with the film and a teflon or nylon surface is used to stretch the film radially by deforming it axially. The film is heated for attaching the wafer and for the stretching process. A vacuum step may be employed to enhance wafer-film adherence.

Inventors

  • 👤 A Moore

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 21:31
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0442; Y; Y10; Y10T; Y10T225/00; Y10T225/10; Y10T225/12

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 78 words
The process of separating adjacent pieces of a wafer which includes the steps of; a. adhering a heated wafer to a single, flat film of plastic by creating a vacuum between the two, b. breaking said wafer into closely adjacent pieces, and c. radially expanding said film of plastic while flat and while maintaining a heated condition of said film and said wafer, whereby adjacent pieces of said wafer are retained upon said film in a separated configuration.
Claim 2
Dependent Claim 78 words
The process of separating adjacent pieces of a wafer which includes the steps of; a. adhering a heated wafer to a single, flat film of plastic by creating a vacuum between the two, b. breaking said wafer into closely adjacent pieces, and c. radially expanding said film of plastic while flat and while maintaining a heated condition of said film and said wafer, whereby adjacent pieces of said wafer are retained upon said film in a separated configuration.
Claim 3
Dependent Claim 93 words
The process of separating adjacent pieces of a wafer which includes the steps of; a. heating said wafer and a larger single, flat film of plastic, b. adhering said wafer upon said plastic while both are heated, c. scribing said wafer into plural discrete areas, d. breaking said wafer into plural pieces corresponding to said areas, e. radially expanding said film of plastic in all directions while flat, and f. retaining said film of plastic expanded, whereby adjacent pieces of said wafer are retained upon said film of plastic in a separated configuration.
Claim 4
Dependent Claim 93 words
The process of separating adjacent pieces of a wafer which includes the steps of; a. heating said wafer and a larger single, flat film of plastic, b. adhering said wafer upon said plastic while both are heated, c. scribing said wafer into plural discrete areas, d. breaking said wafer into plural pieces corresponding to said areas, e. radially expanding said film of plastic in all directions while flat, and f. retaining said film of plastic expanded, whereby adjacent pieces of said wafer are retained upon said film of plastic in a separated configuration.
Claim 5
Dependent Claim 23 words
The process of claim 2, in which; a. the temperature of said heating is within the range of from 60* to 250* C.
Claim 6
Dependent Claim 121 words
The process of separating adjacent pieces of a semiconductor wafer which includes the steps of; a. heating a flat, relatively large quasi-resilient carrier, b. placing a porous membrane upon said carrier, c. placing a scribed wafer upon said porous membrane, d. placing a film of plastic larger than said wafer over said wafer, e. drawing a vacuum through said porous membrane to adhere said film of plastic to said wafer, f. breaking said wafer into plural pieces corresponding to the scribing thereon, g. releasing said vacuum, and h. radially expanding said film of plastic while flat to separate the plural pieces of the wafer, whereby adjacent pieces of said wafer are retained upon said film of plastic in a separated configuration.
Claim 7
Dependent Claim 121 words
The process of separating adjacent pieces of a semiconductor wafer which includes the steps of; a. heating a flat, relatively large quasi-resilient carrier, b. placing a porous membrane upon said carrier, c. placing a scribed wafer upon said porous membrane, d. placing a film of plastic larger than said wafer over said wafer, e. drawing a vacuum through said porous membrane to adhere said film of plastic to said wafer, f. breaking said wafer into plural pieces corresponding to the scribing thereon, g. releasing said vacuum, and h. radially expanding said film of plastic while flat to separate the plural pieces of the wafer, whereby adjacent pieces of said wafer are retained upon said film of plastic in a separated configuration.

References Cited (Backward Citations)

US3448510A Cited
US3562057A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-10-22 1977-04-23 1977-10-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-10-22 1981-04-23 1981-10-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-10-22 1985-04-23 1985-10-23 $7700.00 Window Closed / Lapsed

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