US3766372A
Expired / Lapsed
US
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Method of controlling high electric field domain in bulk semiconductor
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1971-05-14
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Granted: 1973-10-16
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Expires: 1991-05-14
Abstract
Abstract The invention disclosed is for a method and apparatus for controlling high electric field domain in a bulk semiconductor as well as an information processing method thereby. By means of a capacitive electrode, the high electric field domain may be either sustained or extinguished.
Inventors
- 👤 S Kataoka
- 👤 N Hashizume
- 👤 Y Komamiya
- 👤 M Morisue
- 👤 H Tateno
- 👤 M Kawashima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:35
CPC Classifications
G; G06; G06F; G06F7/00; G06F7/38; G06F7/48; G06F7/50; G06F7/505; H; H03; H03B; H03B9/00; H03B9/12; H03K; H03K19/00; H03K19/02; H03K3/00; H03K3/02; H03M; H03M7/00; H10; H10D; H10D99/00; H10N; H10N80/00; H10N80/10
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
73 words
A control method of sustaining or extinguishing a high electric field domain in a semiconductor having a negative differential conductivity at high electric field and provided with at least two ohmic bias electrodes, comprising the step of varying locally the internal electric field of said semiconductor by capacitive electrode means to thereby extinguish said high electric fIeld domain or to thereby sustain said domain in its transit to an anode in said semiconductor.
Claim 2
Dependent Claim
73 words
A control method of sustaining or extinguishing a high electric field domain in a semiconductor having a negative differential conductivity at high electric field and provided with at least two ohmic bias electrodes, comprising the step of varying locally the internal electric field of said semiconductor by capacitive electrode means to thereby extinguish said high electric fIeld domain or to thereby sustain said domain in its transit to an anode in said semiconductor.
Claim 3
Dependent Claim
45 words
A control method of extinguishing a high electric field domain in a semiconductor as set forth in claim 1, wherein at least one capacitive electrode having a static capacity sufficient to extinguish said high electric field domain on said semiconductor is provided on the semiconductor.
Claim 4
Dependent Claim
29 words
A control method of sustaining a high electric field domain in a semiconductor as set forth in claim 2, wherein a negative voltage is applied to said capacitive electrode.
Claim 5
Dependent Claim
44 words
A control method of extinguishing a high electric field domain in a semiconductor as set forth in claim 1, wherein said semiconductor further comprises at least one additional capacitive electrode thereon and a voltage is applied to said at least one additional capacitive electrode.
Claim 6
Dependent Claim
31 words
A control method of extinguishing a high electric field domain in a semiconductor as set forth in claim 4, wherein said voltage to be applied to said capacitive electrode is positive.
Claim 7
Dependent Claim
31 words
A control method of extinguishing a high electric field domain in a semiconductor as set forth in claim 4, wherein said voltage to be applied to said capacitive electrode is negative.
Claim 8
Dependent Claim
35 words
A control method of extinguishing a high electric field domain in a semiconductor as set forth in claim 1, wherein an electrode having a conductivity sufficient to extinguish said domain is provided on said semiconductor.
Claim 9
Dependent Claim
28 words
A control method of sustaining a high electric field domain in a semiconductor as set forth in claim 7, wherein a negative voltage is applied to said electrode.
Claim 10
Dependent Claim
28 words
A control method of extinguishing a high electric field domain in a semiconductor as set forth in claim 7, wherein said conductive electrode is of a P-N junction.
Claim 11
Dependent Claim
28 words
A control method of extinguishing a high electric field domain in a semiconductor as set forth in claim 7, wherein said conductive electrode is of a resistive material.
Claim 12
Dependent Claim
27 words
A control method of extinguishing a high electric field domain in a semiconductor as set forth in claim 7, wherein said conductive electrode is of a metal.
Claim 13
Dependent Claim
41 words
A control method of extinguishing a high electric field domain in a semiconductor having a negative differential conductivity at high electric field and provided with at least two ohmic bias electrodes, comprising the step of irradiating said semiconductor with a light.
Claim 14
Dependent Claim
41 words
A control method of extinguishing a high electric field domain in a semiconductor having a negative differential conductivity at high electric field and provided with at least two ohmic bias electrodes, comprising the step of irradiating said semiconductor with a light.
Claim 15
Dependent Claim
42 words
A control method of extinguishing a high electric field domain in a semiconductor having a negative differential conductivity at high electric field and provided with at least two ohmic bias electrodes, comprising the step of applying a magnetic field to said semiconductor.
Claim 16
Dependent Claim
42 words
A control method of extinguishing a high electric field domain in a semiconductor having a negative differential conductivity at high electric field and provided with at least two ohmic bias electrodes, comprising the step of applying a magnetic field to said semiconductor.
Claim 17
Dependent Claim
67 words
A logical operation system comprising at least one bulk semiconductor provided with at least two ohmic electrodes and having a negative differential conductivity, means for generating a high electric field domain in said semiconductor, capacitive electrode means for extinguishing said high electric field domain and means for detecting said high electric field domain, said system performing a modification of Sheffer''s Stroke (x.y) of two signals (x, y).
Claim 18
Dependent Claim
67 words
A logical operation system comprising at least one bulk semiconductor provided with at least two ohmic electrodes and having a negative differential conductivity, means for generating a high electric field domain in said semiconductor, capacitive electrode means for extinguishing said high electric field domain and means for detecting said high electric field domain, said system performing a modification of Sheffer''s Stroke (x.y) of two signals (x, y).
Claim 19
Dependent Claim
75 words
A high speed carry system comprising a bulk semiconductor having a negative differential conductivity, means for generating a high electric field domain in at least a portion of said semiconductor by applying an external signal, capacitive electrode means for extinguishing or sustaining said high electric field domain by another external signal and means for detecting the presence of said high electric field domain at a certain location, said system performing a carry binary addition operation.
Claim 20
Dependent Claim
75 words
A high speed carry system comprising a bulk semiconductor having a negative differential conductivity, means for generating a high electric field domain in at least a portion of said semiconductor by applying an external signal, capacitive electrode means for extinguishing or sustaining said high electric field domain by another external signal and means for detecting the presence of said high electric field domain at a certain location, said system performing a carry binary addition operation.
Claim 21
Dependent Claim
67 words
A logical operation system comprising a bulk semiconductor having a negative differential conductivity and provided with two ohmic bias electrodes, two capacitive electrodes disposed on the side of said semiconductor, means for providing electric signals to said two capacitive electrodes and means for detecting the presence or absence of said high eLectric field domain in said semiconductor, said system performing an EXCLUSIVE OR of said electric signals.
Claim 22
Dependent Claim
67 words
A logical operation system comprising a bulk semiconductor having a negative differential conductivity and provided with two ohmic bias electrodes, two capacitive electrodes disposed on the side of said semiconductor, means for providing electric signals to said two capacitive electrodes and means for detecting the presence or absence of said high eLectric field domain in said semiconductor, said system performing an EXCLUSIVE OR of said electric signals.
Claim 23
Dependent Claim
64 words
A logical operation system comprising a bulk semiconductor having a negative differential conductivity, capacitive electrode means for generating or extinguishing each of at least two high electric field domains in at least two travelling regions of said domains by an independent signal respectively, and means for detecting the electric current flowing through each said region, said system performing an EXCLUSIVE OR of said signals.
Claim 24
Dependent Claim
64 words
A logical operation system comprising a bulk semiconductor having a negative differential conductivity, capacitive electrode means for generating or extinguishing each of at least two high electric field domains in at least two travelling regions of said domains by an independent signal respectively, and means for detecting the electric current flowing through each said region, said system performing an EXCLUSIVE OR of said signals.
Claim 25
Dependent Claim
75 words
A logical operation system comprising a bulk semiconductor having a negative differential conductivity and provided with two ohmic electrodes, means for generating a high electric field domain in said semiconductor by an external signal, capacitive electrode means for sustaining said high electric field domain in said semiconductor by another external signal, and means for detecting the presence of said high electric field domain in said semiconductor, said system performing a logical product of said signals.
Claim 26
Dependent Claim
75 words
A logical operation system comprising a bulk semiconductor having a negative differential conductivity and provided with two ohmic electrodes, means for generating a high electric field domain in said semiconductor by an external signal, capacitive electrode means for sustaining said high electric field domain in said semiconductor by another external signal, and means for detecting the presence of said high electric field domain in said semiconductor, said system performing a logical product of said signals.
Claim 27
Independent Claim
49 words
A method of generating a plurality of high electric field domains in a bulk semiconductor having a negative differential conductivity, by disposing at least one dielectric material having a capacitive effect on the surface of said semiconductor to thereby bring at least two high electric field domains into co-existence.
Claim 28
Independent Claim
49 words
A method of generating a plurality of high electric field domains in a bulk semiconductor having a negative differential conductivity, by disposing at least one dielectric material having a capacitive effect on the surface of said semiconductor to thereby bring at least two high electric field domains into co-existence.
Claim 29
Dependent Claim
21 words
A method of claim 19 wherein the dielectric material having a capacitive effect is a metal disposed over an insulating material.
Claim 30
Dependent Claim
36 words
A method of generating a plurality of high electric field domains in a bulk semiconductor as set forth in claim 19, wherein a permittivity of said dielectric capacitive member is higher than that of said semiconductor.
Claim 31
Dependent Claim
43 words
A logical operation system comprising a bulk semiconductor provided with two ohmic electrodes and having a differential negative conductivity at high electric field, and capacitive electrode means for extinguishing a high electric field domain in said semiconductor by means of an external signal.
Claim 32
Dependent Claim
43 words
A logical operation system comprising a bulk semiconductor provided with two ohmic electrodes and having a differential negative conductivity at high electric field, and capacitive electrode means for extinguishing a high electric field domain in said semiconductor by means of an external signal.
Claim 33
Dependent Claim
80 words
A logical operation system comprising two bulk semiconductors each provided with two ohmic electrodes and having a differential negative conductivity at high electric field, and means for extinguishing high electric field domains in said semiconductors by means of external signals, wherein an output of the first semiconductor due to the presence of a high electric field domain in said first semiconductor is applied to a control means of the second semiconductor to thereby obtain a logical product of said signals.
Claim 34
Dependent Claim
80 words
A logical operation system comprising two bulk semiconductors each provided with two ohmic electrodes and having a differential negative conductivity at high electric field, and means for extinguishing high electric field domains in said semiconductors by means of external signals, wherein an output of the first semiconductor due to the presence of a high electric field domain in said first semiconductor is applied to a control means of the second semiconductor to thereby obtain a logical product of said signals.
Claim 35
Dependent Claim
113 words
A high speed carry system comprising at least two bulk semiconductors having a negative differential conductivity and provided with two ohmic electrodes, means for generating a high electric field domain, means for controlling said high electric field domain, and means for detecting said high electric field domain, said bulk semiconductors being connected in parallel with each other, and a D.C. power supply connected across said ohmic electrodes of said semiconductors, wherein an output of said means for detecting said high electric field domain in the first semiconductor is applied to said means for generating said high electric field domain of the second semiconductor to thereby perform a carry in a binary addition operation.
Claim 36
Dependent Claim
113 words
A high speed carry system comprising at least two bulk semiconductors having a negative differential conductivity and provided with two ohmic electrodes, means for generating a high electric field domain, means for controlling said high electric field domain, and means for detecting said high electric field domain, said bulk semiconductors being connected in parallel with each other, and a D.C. power supply connected across said ohmic electrodes of said semiconductors, wherein an output of said means for detecting said high electric field domain in the first semiconductor is applied to said means for generating said high electric field domain of the second semiconductor to thereby perform a carry in a binary addition operation.
Claim 37
Dependent Claim
111 words
A high speed carry system comprising at least two bulk semiconductors each having a negative differential conductivity and provided with two ohmic anode and cathode electrodes, means for generating a high electric field domain in said semiconductor, means for controlling said high electric field domain, and means for detecting said high electric field domain, inductances connected in series to said semiconductors, a D.C. power supply connected in parallel with said semiconductors through said inductances and at least one capacitor connected between said anode of the first semiconductor and said cathode of the second semiconductor whereby said high electric field domain can be made to travel in series manner through said semiconductors.
Claim 38
Dependent Claim
111 words
A high speed carry system comprising at least two bulk semiconductors each having a negative differential conductivity and provided with two ohmic anode and cathode electrodes, means for generating a high electric field domain in said semiconductor, means for controlling said high electric field domain, and means for detecting said high electric field domain, inductances connected in series to said semiconductors, a D.C. power supply connected in parallel with said semiconductors through said inductances and at least one capacitor connected between said anode of the first semiconductor and said cathode of the second semiconductor whereby said high electric field domain can be made to travel in series manner through said semiconductors.
Claim 39
Dependent Claim
94 words
A code converter system, comprising at least one branched bulk semiconductor having a negative differential conductivity at high electric field provided with at least three ohmic electrodes, at least one means for generating a high electric field domain, at least two means for detecting a high electric field domain and at least two capacitive electrode means for sustaining or extinguishing a high electric field domain, the branch through which the high electric field domain propagates and subsequently detected by the detecting electrode being determined by applying signal voltages to said sustaining or extinguishing means.
Claim 40
Dependent Claim
94 words
A code converter system, comprising at least one branched bulk semiconductor having a negative differential conductivity at high electric field provided with at least three ohmic electrodes, at least one means for generating a high electric field domain, at least two means for detecting a high electric field domain and at least two capacitive electrode means for sustaining or extinguishing a high electric field domain, the branch through which the high electric field domain propagates and subsequently detected by the detecting electrode being determined by applying signal voltages to said sustaining or extinguishing means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-15 | 1977-04-16 | 1977-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-15 | 1981-04-16 | 1981-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-15 | 1985-04-16 | 1985-10-16 | $7700.00 | Window Closed / Lapsed |