US3555282A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation sensitive switching system employing a semiconductor element
Assignee: NEC Corp
•
Filing: 1968-07-30
•
Granted: 1971-01-12
•
Expires: 1988-07-30
Abstract
Abstract A device is described for generating the beam effect in a semiconductor suitable therefor by applying a source of light at a portion of the semiconductor material to lower the resistance thereof and effectively raise the field intensity elsewhere in the semiconductor. The field intensity is produced by applying a voltage source across the semiconductor with a level selected to produce an electric field intensity in the material that is less than that necessary to produce Gunn oscillations but which is sufficiently high to permit the light source to trigger the semiconductor into high field domain Gunn oscillations.
Inventors
- 👤 Hisayoshi Yanai
- 👤 Toshiaki Ikoma
- 👤 Takayuki Sugeta
- 👤 Yasuo Matsukura
- 👤 Kuniichi Ohta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:33
CPC Classifications
H; H10; H10N; H10N80/00; H10N80/10; H10N80/103
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
127 words
A switching device comprising a semiconductor crystal capable of forming a high field domain resorting to the bulk effect negative resistance, an anode and a cathode in ohmic contact with said crystal, a load and an electric biasing source connected in series with said crystal for biasing said crystal to an electric field below the threshold value for forming said high field domain; and a source of light rays for irradiating a portion of said crystal to initiate formation of said high field domain for a time period shorter than the current pulse width t specific to said crystal, said t being given by the expression t L/v, where L is the length of said crystal, and v is the drift velocity of the high field domain.
Claim 2
Dependent Claim
127 words
A switching device comprising a semiconductor crystal capable of forming a high field domain resorting to the bulk effect negative resistance, an anode and a cathode in ohmic contact with said crystal, a load and an electric biasing source connected in series with said crystal for biasing said crystal to an electric field below the threshold value for forming said high field domain; and a source of light rays for irradiating a portion of said crystal to initiate formation of said high field domain for a time period shorter than the current pulse width t specific to said crystal, said t being given by the expression t L/v, where L is the length of said crystal, and v is the drift velocity of the high field domain.
Claim 3
Dependent Claim
31 words
The device as recited in claim 1, wherein said crystal contains n-type impurities of 1012 to 1016 atoms/cm3 and wherein said high field domain is formed resorting to the Gunn effect.
Claim 4
Dependent Claim
24 words
The device as recited in claim 1, wherein said light rays are caused to selectively radiate the portion of the crystal near said anode.
Claim 5
Dependent Claim
30 words
The device as recited in claim 1, wherein said crystal has high and low field portions and wherein said light rays are directed to irradiate said low electric field portion.
Claim 6
Dependent Claim
24 words
The device as recited in claim 4, wherein said light rays are caused to selectively radiate the portion of the crystal near said anode.
References Cited (Backward Citations)
US3439290A
Cited
US3440425A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-11 | 1974-07-13 | 1975-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-11 | 1978-07-13 | 1979-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-11 | 1982-07-13 | 1983-01-12 | $7700.00 | Window Closed / Lapsed |