Patent US3764507A successfully refreshed from Google Patents.
US3764507A
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US
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Method of making semiconductor layers on high purity alumina layers
Assignee: Motors Liquidation Co
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Filing: 1971-08-04
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Granted: 1973-10-09
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Expires: 1991-08-04
Abstract
Abstract AN IMPROVED SUBSTRATE MATERIAL FOR SEMICONDUCTOR DEVICES AND METHODS FOR MAKING SAME. THE SUBSTRATE INCLUDES A REFRACTORY LIKE SUPPORTING LAYER COATED WITH A HIGH PURITY LAYER OF REACTIVELY SPUTTERED INSULATING MATERIAL ONTO WHICH A VERY HIGH PURITY SEMICONDUCTIVE LAYER IS DEPOSITED. ONE DEVICE PROPOSED FOR THE SUBSTRATE MATERIAL IS A DIODE ASSEMBLY HAVING AN ALUMINA SUBSTRATE WITH A REACTIVELY SPUTTERED LAYER OF ALUMINA ON A MAJOR SURFACE. A LAYER OF P-TYPE SEMICONDUCTIVE MATERIAL DEPOSITED ON THE SPUTTERED LAYER AND A P-N JUNCTION ESTABLISED IN THE LAYER.
Inventors
- 👤 Kinnon M Mc
- 👤 Iver B Mac
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:33
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/411; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/22; C23C16/24; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/085; Y10S148/118; Y10S148/15; Y10S148/158; Y10S148/169
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-08 | 1977-04-09 | 1977-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-08 | 1981-04-09 | 1981-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-08 | 1985-04-09 | 1985-10-09 | $7700.00 | Window Closed / Lapsed |