Patent US3764491A successfully refreshed from Google Patents.
US3764491A
Expired / Lapsed
US
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Electrolytic oxidation of silicon
Assignee: AT&T Inc
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Filing: 1971-12-13
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Granted: 1973-10-09
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Expires: 1991-12-13
Abstract
Abstract AN ELECTROLYTIC OXIDATION SYSTEM IS DESCRIBED FOR GROWING AN OXIDE ON THE SURFACE OF SILICON SEMICONDUCTORS. THE ELECTROLYTE IS AN AQUEOUS SOLUTION OF HYDROGEN PEROXIDE. THICK OXIDES MAY BE GROWN IN RELATIVELY SHORT PERIODS OF TIME AT ROOM TEMPERATURE, THUS AVOIDING THERMAL DAMAGE TO THE JUNCTION CHARACTERISTIC OF THE SEMICONDUCTOR. THE SYSTEM IS DEVOID OF ANY METALLIC IONIC COMPONENT WHICH CAN AFFECT THE PROPERTIES OF THE OXIDE AND SEMICONDUCTOR.
Inventors
- 👤 B Schwartz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; C; C25; C25D; C25D11/00; C25D11/02; C25D11/32; H10P14/6324
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-08 | 1977-04-09 | 1977-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-08 | 1981-04-09 | 1981-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-08 | 1985-04-09 | 1985-10-09 | $7700.00 | Window Closed / Lapsed |