Method of manufacturing a semiconductor capacitance diode
Abstract
Abstract A METHOD OF MANUFACTURING A SEMICONDUCTOR CAPACITANCE DIODE IN WHICH A LARGE CAPACITY VARIATION AND AN EXPONENTIAL VARIATION OF THE CAPACITY-VOLTAGE CHARACTERISTIC ARE OBTAINED BY THE FOLLOWING MANUFACTURING STEPS: (1) NO, ONE OR SEVERAL EVER LOWER OHMIC LAYERS OF THE SAME CONDUCTIVITY TYPE ARE PROVIDED ON THE HIGH-OHMIC LAYER ON A LOW-OHMIC SUBSTRATE. (2) BY A SUITABLY THERMAL TREATMENT, THE STEP-LIKE DOPING PROFILE RESULTING FROM THE PROVIDED LAYER IS ROUNDED OFF BY OUT-DIFFUSION. (3) PRIOR TO PROVIDING THE P-N JUNCTION IN THE LAST LAYER, AT LEAST ONE OUT-DIFFUSION OF DOPING MATERIAL CAUSING THE SAME CONDUCTIVITY TYPE IS CARRIERD OUT, AS A RESULT OF WHICH THE CONDUCTIVITY IS FURTHER INCREASED.
Inventors
- 👤 G Raabe
- 👤 D Eckstein
- 👤 H Sauermann
- 👤 G Winkler
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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