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US3763403A Expired / Lapsed US ⏱️ 0.0 years remaining

Isolated heat-sink semiconductor device

Assignee: General Electric Co
•
Filing: 1972-03-01
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Granted: 1973-10-02
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Expires: 1992-03-01
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Abstract

Abstract Plastic encapsulated power semiconductor devices, such as controlled rectifiers, triacs and power transistors, are disclosed in which the semiconductor body of the device is electrically isolated from the combination heat sink and mounting plate of the device by a thin ceramic electrically insulative plate of high thermal conductivity which provides bonding sites for anchoring the inner ends of the external leads associated with the semiconductor body. One of the external leads bonded to the insulative plate has a portion underlying the semiconductor body and providing an electrically conductive path of high thermal conductivity for heat extraction from the semiconductor body.

Inventors

  • 👤 W Lootens

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 00:28
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/60; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W72/01; H10W72/0198; H10W74/00; H10W74/10; H10W74/131; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/076; H10W72/07631; H10W72/07636; H10W72/90; H10W72/921; H10W72/926; H10W90/00; H10W90/701; H10W90/761; H10W90/766

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 252 words
In a semiconductor device including a relatively thick mounting plate of high thermal conductivity metal and a semiconductor body having a bottom major face provided with an electrode and a top major face provided with other electrodes, a thin wafer of electrically insulative thermally conductive material overlying a portion of said mounting plate and having its bottom major face thermally-conductively bonded to said mounting plate, the top major face of said wafer having a plurality of spaced metallized external lead bonding sites, a central external wire-like lead and two side external wirelike leads bonded at their respective inner end portions to said respective bonding sites, the inner end portion of the central lead including a thin flattened paddle-like segment having a top surface and having a bottom surface thermally conductively bonded across its entirety to its respective bonding site on said wafer, heat reservoir means consisting of a high thermal conductivity metal slug of much larger mass than the semiconductor body, said slug being thermally and electrically conductively joined to and extending between the entirety of the bottom major face of said semiconductor body and the entirety of the top surface of said flattened segment, respective inner leads joining the inner end portions of said side external leads to the other respective electrodes of said semiconductor body, said wafer, slug, semiconductor body, inner leads, and inner end portions of said external leads all being enclosed in a plastic encapsulant from which said mounting plate and the remainder of said external leads extend.
Claim 2
Dependent Claim 252 words
In a semiconductor device including a relatively thick mounting plate of high thermal conductivity metal and a semiconductor body having a bottom major face provided with an electrode and a top major face provided with other electrodes, a thin wafer of electrically insulative thermally conductive material overlying a portion of said mounting plate and having its bottom major face thermally-conductively bonded to said mounting plate, the top major face of said wafer having a plurality of spaced metallized external lead bonding sites, a central external wire-like lead and two side external wirelike leads bonded at their respective inner end portions to said respective bonding sites, the inner end portion of the central lead including a thin flattened paddle-like segment having a top surface and having a bottom surface thermally conductively bonded across its entirety to its respective bonding site on said wafer, heat reservoir means consisting of a high thermal conductivity metal slug of much larger mass than the semiconductor body, said slug being thermally and electrically conductively joined to and extending between the entirety of the bottom major face of said semiconductor body and the entirety of the top surface of said flattened segment, respective inner leads joining the inner end portions of said side external leads to the other respective electrodes of said semiconductor body, said wafer, slug, semiconductor body, inner leads, and inner end portions of said external leads all being enclosed in a plastic encapsulant from which said mounting plate and the remainder of said external leads extend.
Claim 3
Dependent Claim 56 words
A semiconductor device as defined in claim 1 wherein said side leads extend from said encapsulant in parallel coplanar relation with said central lead and have crank portions for adjusting the spacing of their inner ends relative to their outer end portions by rotation of each side lead about the axis of its outer end portion.
Claim 4
Dependent Claim 26 words
A semiconductor device as defined in claim 1 wherein said mounting plate has peripherally extending ribs on its side walls forming shoulders interlocking with the encapsulant.

References Cited (Backward Citations)

US3311798A Cited
US3548267A Cited
US3469148A Cited
FR1553893A Cited
US3581387A Cited
US3469017A Cited
US3549958A Cited
US3569797A Cited
US3609471A Cited
US3597666A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-10-01 1977-04-02 1977-10-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-10-01 1981-04-02 1981-10-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-10-01 1985-04-02 1985-10-02 $7700.00 Window Closed / Lapsed

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