Technique for the fabrication of a millimeter wave beam lead schottkybarrier device
Abstract
Abstract A technique is described for the fabrication of a novel planar millimeter wave beam lead Schottky barrier device. The inventive technique involves the growth of a 6 to 7 micron layer of epitaxial gallium arsenide doped to 3 to 5 X 1018 atoms/cc on a semi-insulating gallium arsenide substrate by the arsenic trichloride-gallium-hydrogen vapor transport technique. Following, the epitaxial layer is etched in the same ambient by adding helium and establishing a doping level of 5 X 1015 to 2 X 1017 atoms/cc. Growth of a 0.1 to 0.2 micron thick layer of gallium arsenide is then effected. The technique results in the formation of an abrupt doping profile and in a device manifesting enhanced frequency.
Inventors
- 👤 Lorenzo J Di
Bibliographic Details
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