Procedure and preparation for the production of homogeneous and planeparallel epitactic growth layers of semiconducting compounds by melt epitaxy
Abstract
Abstract Process and apparatus for preparing doped plane parallel epitactic growth layers of semiconducting compounds, especially GaAs, by melt epitaxy, using a non-stoichiomecric metal melt. A thick walled cylindrical melting crucible is used to receive the semiconducting compound. A cooling finger capable of being unscrewed is near the bottom of the melt area. A substrate is placed between the hollow crucible and the cooling finger, by a thermal resistance which increases toward the center in that portion of the cooling finger on which the substrate bears, so that the temperature gradient, before and during epitactic coating, is in the axial direction only and not in the radial direction thereby resulting in very planar growth layers.
Inventors
- 👤 G Winstel
- 👤 P Jochen
Bibliographic Details
Claims Analysis
Total Claims: 11References Cited (Backward Citations)
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