Patent US3761837A successfully refreshed from Google Patents.
US3761837A
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Lasers in indirect-bandgap semiconductive crystals doped with isoelectronic traps
Assignee: AT&T Inc
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Filing: 1971-10-08
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Granted: 1973-09-25
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Expires: 1991-10-08
Abstract
Abstract There are disclosed lasers in indirect-bandgap semiconductive crystals, such as gallium phosphide crystals containing isoelectronic traps such as those provided by nitrogen or bismuth, in which low-threshold, high-gain stimulated emission of coherent radiation is obtained. It was previously believed that stimulated emission in indirect-bandgap materials was unlikely. In contrast to similarly-composed electroluminescent devices, such a laser typically has an optical resonator provided along the junction plane. An experimental embodiment is a superradiant laser that is optically pumped by coherent light along a line extending to an edge of the crystal.
Inventors
- 👤 R Leheny
- 👤 R Logan
- 👤 R Nahory
- 👤 K Shaklee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:07
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3059117A
Cited
US3592704A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-24 | 1977-03-26 | 1977-09-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-24 | 1981-03-26 | 1981-09-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-24 | 1985-03-26 | 1985-09-25 | $7700.00 | Window Closed / Lapsed |