Patent US3761375A successfully refreshed from Google Patents.
US3761375A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating vidicon tube target having a high resistance sputtered semi insulating film
Assignee: Texas Instruments Inc
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Filing: 1972-01-19
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Granted: 1973-09-25
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Expires: 1992-01-19
Abstract
Abstract SEMICONDUCTOR SUBSTRATES MAY BE COATED WITH A HIGH RESISTANCE FILM BY AN R.F. SPUTTERING PROCESS. THE HIGH RESISTANCE FILM IS A COMPOUND OF A CERAMIC AND A METAL, E.G. CHROME AND QUARTZ. PREFERABLY, THE HIGH RESISTANCE CERAMIC-METAL FILM IS FORMED IN A VACUUM CHAMBER WITH THE CERAMIC WAFER SUPPORTED ON A SPUTTERING ELECTRODE. A PREDETERMINED AMOUNT OF METAL CHIPS ARE PLACED ON THE CERAMIC WAFER AND PARTICLES OF BOTH INTIMATELY MIX DURING THE SPUTTERING OPERATION. IN ONE APPLICATION, THE HIGH RESISTANCE FILM IS DEPOSITED OVER THE INSULATING LAYER AND DIODE JUNCTIONS OF A VIDICON TUBE TARGET. IN THIS APPLICATION, THE HIGH RESISTANCE FILM FUNCTIONS AS A CHARGE CARRIER PATH.
Inventors
- 👤 J Pierce
- 👤 C Stephens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:11
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; H10D; H10D99/00; Y; Y10; Y10S; Y10S257/00; Y10S257/917
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-24 | 1977-03-26 | 1977-09-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-24 | 1981-03-26 | 1981-09-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-24 | 1985-03-26 | 1985-09-25 | $7700.00 | Window Closed / Lapsed |