Abstract Light sensitive semiconductor device with several light sensitive elements, mutually separated from each other, arranged in the form of a matrix in rows and columns on a doped semiconductor substrate. Each of the light sensitive elements has a rectifying hetero junction, which is formed by a thin, light transparent semiconductor layer made as an antireflex layer, and a first semiconductor region diffused into the semiconductor substrate or a second partial region diffused into the first semiconductor region. The thin light transparent semiconductor layer extends in rows on the semiconductor substrate isolated from the latter by an isolating layer. The diffused first semiconductor region extends in columns, into the surface of the semiconductor substrate. The light sensitive semiconductor layers, extending in the rows, and the diffused first semiconductor regions, extending in columns, are provided with barrier free contacts at the edges.
The light sensitive semiconductor device of claim 1, wherein the diffused-in first semiconductor regions exhibit the opposite conduction type from the doped semiconductor substrate.
Claim 2
Dependent Claim
49 words
The light sensitive semiconductor device of claim 1, wherein the first semiconductor regions diffused-in by columns have the opposite conduction type from the doped semiconductor substrate and that the second diffused-in regions in the first semiconductor regions form islands of the same conduction type as the doped semiconductor substrate.
Claim 3
Dependent Claim
21 words
The light sensitive semiconductor device of claim 3, wherein the isolating layer is a layer of oxide of the semiconductor substrate.
Claim 4
Dependent Claim
17 words
The light sensitive semiconductor device of claim 4, wherein the substrate is silicon, germanium or gallium arsenide.
Claim 5
Dependent Claim
20 words
The light sensitive semiconductor device of claim 4, wherein the light transparent semiconductor layer is tin oxide or indium oxide.
Claim 6
Dependent Claim
23 words
The light sensitive semiconductor device of claim 4, wherein the light transparent semiconductor layer is indium oxide doped with tin, titanium or cadmium.
Claim 7
Dependent Claim
20 words
The light sensitive semiconductor device of claim 4, wherein the light transparent semiconductor layer is tin oxide doped with antimony.