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US3760238A
Expired / Lapsed
US
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Fabrication of beam leads
Assignee: Microsystems International Ltd
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Filing: 1972-02-28
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Granted: 1973-09-18
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Expires: 1992-02-28
Abstract
Abstract A structure and method of fabricating beam leads or bump terminals for semiconductor chips in which a common potential for plating purposes is obtained using a metallized short circuitry grid in the cleavage channel which is severed during chip separation. The grid is deposited at the same time as normal metallization, and the beams or bumps are plated through holes in a scratch protection layer used as a mask.
Inventors
- 👤 C Hamer
- 👤 A Loro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:37
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/60; H10P; H10P95/00; H10W72/01; H10W72/012; H10W72/019; H10W72/20; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
229 words
A semiconductor structure comprising: a. a body of semiconductor material, b. a pair of spaced contact regions on a surface of said body, c. an inactive region of semiconductor material extending transversely through said body, intermediate said contact regions, d. an insulative layer adherent to and covering the surface except over said contact regions, e. conductive stripes of aluminum adherent to and overlying the insulative layer, in contact with said surface at each of said contact regions, individually extending over the inactive region short of the edge of the inactive region adjacent the opposite contact region. f. an additional stripe of aluminum continuous with the conductive stripes adherent to and overlying the insulative layer above the inactive region, narrower in width than the inactive region, g. an insulative layer covering and adherent to the surface of said body, including the surface of the aluminum, except over defined beam lead surface areas of said conductive stripes of aluminum, said areas extending from ends at the edges of the inactive region to positions on the body of the semiconductor material away from the inactive region, h. a layer of zinc adherent to and overlying the surface of the uncovered surface of the aluminum, i. a layer of nickel adherent to and over-lying the surface of the zinc, j. individual massive gold beams adherent to and overlying the surface of the nickel.
Claim 2
Dependent Claim
229 words
A semiconductor structure comprising: a. a body of semiconductor material, b. a pair of spaced contact regions on a surface of said body, c. an inactive region of semiconductor material extending transversely through said body, intermediate said contact regions, d. an insulative layer adherent to and covering the surface except over said contact regions, e. conductive stripes of aluminum adherent to and overlying the insulative layer, in contact with said surface at each of said contact regions, individually extending over the inactive region short of the edge of the inactive region adjacent the opposite contact region. f. an additional stripe of aluminum continuous with the conductive stripes adherent to and overlying the insulative layer above the inactive region, narrower in width than the inactive region, g. an insulative layer covering and adherent to the surface of said body, including the surface of the aluminum, except over defined beam lead surface areas of said conductive stripes of aluminum, said areas extending from ends at the edges of the inactive region to positions on the body of the semiconductor material away from the inactive region, h. a layer of zinc adherent to and overlying the surface of the uncovered surface of the aluminum, i. a layer of nickel adherent to and over-lying the surface of the zinc, j. individual massive gold beams adherent to and overlying the surface of the nickel.
Claim 3
Dependent Claim
64 words
A semiconductor structure as defined in claim 1 further comprising an array of active chip areas surrounded by inactive regions, a plurality of contact regions on each chip area, the conductive stripes of aluminum individually extending about to the edge of the inactive region adjacent the opposite chip area, said additional stripe of aluminum continuous with all the conductive stripes in a grid pattern.
Claim 4
Dependent Claim
26 words
A semiconductor structure as defined in claim 2 in which the insulative layer is comprised of silicon dioxide, and the semiconductor material is comprised of silicon.
Claim 5
Dependent Claim
168 words
A semiconductor device comprising: a. a body of silicon semiconductor material having a surface to which external contact is to be made, b. a silicon dioxide insulative layer adherent to and covering the surface except over a predetermined contact region, c. a conductive stripe of aluminum adherent to and overlying the insulative layer and in contact with said surface in the contact region, extending to the edge of the device, d. a layer of electrolessly plated zinc adherent to and overlying a portion of the surface of the aluminum adjacent the edge thereof, e. a layer of metal chosen from the group consisting of silver and nickel adherent to and overlying the surface of the zinc, f. electrically conductive beams of uniform thickness adherent to the surface of the said layer of metal adjacent said edge, and cantilevered outwardly from the edge of the device, and g. an insulative layer covering and adherent to the remaining surface of the semiconductor body and the unplated conductive stripe of aluminum.
Claim 6
Dependent Claim
168 words
A semiconductor device comprising: a. a body of silicon semiconductor material having a surface to which external contact is to be made, b. a silicon dioxide insulative layer adherent to and covering the surface except over a predetermined contact region, c. a conductive stripe of aluminum adherent to and overlying the insulative layer and in contact with said surface in the contact region, extending to the edge of the device, d. a layer of electrolessly plated zinc adherent to and overlying a portion of the surface of the aluminum adjacent the edge thereof, e. a layer of metal chosen from the group consisting of silver and nickel adherent to and overlying the surface of the zinc, f. electrically conductive beams of uniform thickness adherent to the surface of the said layer of metal adjacent said edge, and cantilevered outwardly from the edge of the device, and g. an insulative layer covering and adherent to the remaining surface of the semiconductor body and the unplated conductive stripe of aluminum.
Claim 7
Dependent Claim
27 words
A semiconductor device as defined in claim 4 in which said layer of metal is comprised of nickel, and the electrically conductive beams are comprised of gold.
Claim 8
Dependent Claim
45 words
A semiconductor device as defined in claim 5, in which the aluminum has a thickness of approximately between 0.5 and 2 microns, the nickel has a thickness approximately between 0.5 and 2 microns, and the beams have a thickness approximately between 10 and 20 microns.
Claim 9
Dependent Claim
126 words
A semiconductor structure coMprising: a. a body of semiconductor material comprising a group of monolithic circuits, each having a layer of conductive material defining predetermined circuit paths, and having a protective non-conducting coating over all portions except over defined external terminal surface areas of the conductive material, b. an inactive region separating each of the monolithic circuits, c. a conductive grid comprised of said conductive material, coated by the non-conducting material, interconnecting each of said circuit paths, passing over the inactive region with each traverse between each of said circuit paths, d. a layer of plated intermetal adherent to and overlying only the external terminal surface areas of the conductive material, and e. a massive layer of external terminal metal overlying and adherent to said intermetal.
Claim 10
Dependent Claim
126 words
A semiconductor structure coMprising: a. a body of semiconductor material comprising a group of monolithic circuits, each having a layer of conductive material defining predetermined circuit paths, and having a protective non-conducting coating over all portions except over defined external terminal surface areas of the conductive material, b. an inactive region separating each of the monolithic circuits, c. a conductive grid comprised of said conductive material, coated by the non-conducting material, interconnecting each of said circuit paths, passing over the inactive region with each traverse between each of said circuit paths, d. a layer of plated intermetal adherent to and overlying only the external terminal surface areas of the conductive material, and e. a massive layer of external terminal metal overlying and adherent to said intermetal.
Claim 11
Dependent Claim
43 words
A semiconductor structure as defined in claim 7, including an extension of each of said circuit paths extending perpendicularly to the edge of its associated monolithic circuit partially across the inactive region, said grid being confined within the boundaries of the inactive region.
Claim 12
Dependent Claim
39 words
A semiconductor structure as defined in claim 7, in which said grid is disposed along a zig-zag path having an axis parallel to the axis of, and central of the inactive region, connected to each of said circuit paths.
Claim 13
Dependent Claim
24 words
A semiconductive structure as defined in claim 9 in which the exposed portions of the conductive material are located wholly over the monolithic circuits.
Claim 14
Dependent Claim
97 words
A semiconductor structure as defined in claim 7, in which said exposed portions of the conductive material are located at positions over the monolithic circuits adjacent the boundaries thereof, the conductive grid following generally castellated paths between and interconnecting each of said exposed portions, each grid path between each of said exposed portions passing over the inactive region; the semiconductor material being comprised of silicon, the non-conducting coating being comprised of silicon dioxide, the intermetal being comprised of a layer of zinc covered by a layer of nickel, and the external terminal metal being comprised of gold.
Claim 15
Dependent Claim
18 words
A semiconductor structure as defined in claim 10 in which said zig-zag path is generally castellated in form.
Claim 16
Dependent Claim
42 words
A semiconductor structure as defined in claim 7, in which the conductive material is comprised of aluminum and the intermetal is comprised of a layer of zinc covered by a layer of nickel, and the external terminal metal is comprised of gold.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-17 | 1977-03-19 | 1977-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-17 | 1981-03-19 | 1981-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-17 | 1985-03-19 | 1985-09-18 | $7700.00 | Window Closed / Lapsed |