Patent US3758387A successfully refreshed from Google Patents.
US3758387A
Expired / Lapsed
US
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Ion displacement crystal growth
Assignee: US Philips Corp
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Filing: 1971-05-10
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Granted: 1973-09-11
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Expires: 1991-05-10
Abstract
Abstract A METHOD OF GROWING SINGLE CRYSTALS OF A METAL OR A SEMICONDUCTOR ON A SUBSTRATE WHICH MAY BE EITHER A METAL OR A SEMICONDUCTOR BY ELECTROLYTIC DISPLACEMENT OF THE METAL OR METALLOID AND DEPOSITION THROUGH HOLES IN A MASK COVERING THE SUBSTRATE, THE MASK CONSISTING OF A MATERIAL WHICH IS INERT TO THE MATERIAL BEING DEPOSITED.
Inventors
- 👤 W Zwicker
- 👤 M Fucci
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; C; C30; C30B; C30B29/00; C30B29/02; C30B7/00; C30B7/005; G; G11; G11B; G11B5/00; G11B5/62; G11B5/68; G11B5/70; G11B5/714; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/072; Y10S148/085; Y10S148/115
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-10 | 1977-03-12 | 1977-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-10 | 1981-03-12 | 1981-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-10 | 1985-03-12 | 1985-09-11 | $7700.00 | Window Closed / Lapsed |