Patent US3757173A successfully refreshed from Google Patents.
US3757173A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor pressure sensitive transducer
Assignee: Panasonic Holdings Corp
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Filing: 1971-11-08
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Granted: 1973-09-04
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Expires: 1991-11-08
Abstract
Abstract The pressure sensitive property of a metal-semiconductor contact or a PN junction is utilized to form a mechano-electrical transducer. In such a transducer, a pressure is applied to a pressure sensitive portion through a protrusion of the semiconductor material itself, or a very hard metal or insulating material strongly adhered onto the pressure sensitive portion.
Inventors
- 👤 Y Kobe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:21
CPC Classifications
H; H04; H04R; H04R23/00; H04R23/006
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
65 words
A semiconductor mechano-electrical transducer comprising: a semiconductor body; and at least one columnar projection for applying an outer pressure to the semiconductor body through said projection, said projection being of material different from semiconductor material and at least as hard as said semiconductor body, and said projeCtion being deposited by a deposition process on the semiconductor body so as to achieve secure mechanical connection therebetween.
Claim 2
Dependent Claim
65 words
A semiconductor mechano-electrical transducer comprising: a semiconductor body; and at least one columnar projection for applying an outer pressure to the semiconductor body through said projection, said projection being of material different from semiconductor material and at least as hard as said semiconductor body, and said projeCtion being deposited by a deposition process on the semiconductor body so as to achieve secure mechanical connection therebetween.
Claim 3
Dependent Claim
17 words
A semiconductor mechano-electrical transducer according to claim 1, in which the said hard material is a metal.
Claim 4
Dependent Claim
16 words
A semiconductor mechano-electrical transducer according to claim 1, in which said hard material is an insulator.
Claim 5
Dependent Claim
44 words
A semiconductor transducer according to claim 1, wherein said semiconductor body comprises an N-type region and a P-type region forming a P-N junction at their interface, said at least one projection being located on the surface of said semiconductor body over said P-N junction.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-03 | 1977-03-05 | 1977-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-03 | 1981-03-05 | 1981-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-03 | 1985-03-05 | 1985-09-04 | $7700.00 | Window Closed / Lapsed |