Patent US3757145A successfully refreshed from Google Patents.
US3757145A
Expired / Lapsed
US
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Integrable igfet circuit
Assignee: TDK Micronas GmbH
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Filing: 1972-06-30
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Granted: 1973-09-04
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Expires: 1992-06-30
Abstract
Abstract This invention relates to an integrable solid-state circuit for controlling or regulating the effective threshold voltage of an insulated gate field effect transistor (IGFET). The substrate and the gate electrode of the IGFET are bridged by the series arrangement of a diode operating in the reverse direction and an auxiliary IGFET operated in the saturation range.
Inventors
- 👤 F Adam
- 👤 W Gollinger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:01
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205; H; H03; H03K; H03K17/00; H03K17/14; H03K17/145; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/09441; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H10D84/82; H10D84/83; H10D84/85; H10D89/00; H10D89/211; H10D89/213
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
189 words
An improved integrable solid state circuit for adjusting or controlling the effective threshold voltage of a first insulated gate field effect control transistor of the enhancement type, wherein the substrate is applied to ground potential and wherein the input signal with reference to said substrate is applied via a coupling capacitor to the gate electrode, wherein the improvement comprises: a semiconductoR diode bridging the substrate and the gate electrode of said insulated gate field effect transistor, said diode operating in the reverse direction below the breakdown voltage; an auxiliary second insulated gate field effect transistor of the enhancement type forming a series arrangement with said semiconductor diode, said auxiliary transistor operated in the saturation range with a reverse current smaller than the reverse current of said diode, and having a drain electrode at a potential greater than that of the gate potential reduced by the amount of the threshold voltage, and having a substrate applied to ground potential; and a source of a constantly adjustable voltage coupled between the substrate and the gate electrode of said auxiliary second transistor for controlling the effective threshold voltage of said auxiliary transistor.
Claim 2
Dependent Claim
189 words
An improved integrable solid state circuit for adjusting or controlling the effective threshold voltage of a first insulated gate field effect control transistor of the enhancement type, wherein the substrate is applied to ground potential and wherein the input signal with reference to said substrate is applied via a coupling capacitor to the gate electrode, wherein the improvement comprises: a semiconductoR diode bridging the substrate and the gate electrode of said insulated gate field effect transistor, said diode operating in the reverse direction below the breakdown voltage; an auxiliary second insulated gate field effect transistor of the enhancement type forming a series arrangement with said semiconductor diode, said auxiliary transistor operated in the saturation range with a reverse current smaller than the reverse current of said diode, and having a drain electrode at a potential greater than that of the gate potential reduced by the amount of the threshold voltage, and having a substrate applied to ground potential; and a source of a constantly adjustable voltage coupled between the substrate and the gate electrode of said auxiliary second transistor for controlling the effective threshold voltage of said auxiliary transistor.
Claim 3
Dependent Claim
44 words
An improved integrable solid state circuit according to claim 1 wherein the threshold voltage of said auxiliary second transistor is controlled by a voltage developed across an ohmic voltage divider having one external connection applied to the drain electrode of said auxiliary second transistor.
Claim 4
Dependent Claim
148 words
An improved integrable solid state circuit according to claim 1 further comprising: third and fourth insulated gate field effect transistors; a second diode forming a series arrangement consisting of said second diode and said third and fourth insulated gate field effect transistors, said diode having a reverse current which is greater than that of said series arrangement, said third and fourth insulated gate field effect transistors having substrates coupled to ground potential, having gate electrodes connected to the drain electrode of said insulated gate field effect control transistor, the source electrode of said third insulated gate field effect transistor coupled to ground potential and the gate and drain electrode of said third insulated field effect transistor coupled to the source electrode of said fourth insulated gate field effect transistor, and the gate and drain electrode of said fourth insulated gate field effect transistor connected to said second diode.
Claim 5
Dependent Claim
56 words
An improved integrable circuit according to claim 3 wherein the channel lengths L, channel width Wand reverse currents IT2,Sp of said auxiliary second transistor, the reverse current IT34,Sp of the series connection of said third and fourth transistors, as well as the reverse currents ID,Sp of said first and second diodes are related by the formula
Claim 6
Dependent Claim
9 words
An improved integrable circuit according to claim 4 wherein
Claim 7
Dependent Claim
74 words
An improved integrable circuit according to claim 3 wherein the gate electrode of said first transistor, in the case of a circuit consisting of N channel transistors, is made from a material having a smaller electron work function and, in the case of a circuit of P channel transistors, from a material having a greater electron work function than the gate electrodes of said first transistor, said auxiliary second transistor and said fourth transistor.
Claim 8
Dependent Claim
82 words
An improved integrable circuit according to claim 6 wherein all gate electrodes are made of silicon and wherein said gate electrodes are doped with the same conductivity type as the associated source and drain zones, and that said gate electrode of said first transistor in the case of circuits employing P channel transistors, as well as in the case of circuits employing N channel transistors, is more strongly doped than the gate electrodes of the remaining transistors of the same channel type.
Claim 9
Dependent Claim
39 words
An improved integrable circuit according to claim 7 wherein the source zone of the auxiliary second transistor and the zone of the same conductivity type of said first diode are arranged at the surface of a common semiconductor body.
Claim 10
Dependent Claim
34 words
An integrable circuit according to claim 8 wherein the source zone of said auxiliary second transistor is combined with the zone of the same conductivity type of sAid first diode to form one zone.
Claim 11
Dependent Claim
51 words
An improved integrable circuit according to claim 8 wherein the source zone of said auxiliary transistor is contacted with a layer designed partly as the gate electrode of said controlled first transistor and partly as the electrode of a coupling capacitor arranged prior to the gate electrode of said controlled transistor.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-03 | 1977-03-05 | 1977-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-03 | 1981-03-05 | 1981-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-03 | 1985-03-05 | 1985-09-04 | $7700.00 | Window Closed / Lapsed |