Method of making a semiconductor device
Abstract
Abstract A TRANSISTOR HAVING AN EMITTER ZONE AND A COLLECTOR ZONE SEPARATED BY A BASE ZONE, AND A METHOD OF MAKING THE SAME. THE REGION OF THE COLLECTOR ZONE ADJACENT TO THE BASE ZONE AND OPPOSITE THE EMITTER ZONE IS OF LOWER RESISTANCE THAN THE REMAINDER OF THE COLLECTOR ZONE. THE METHOD OF FORMING THE TRANSISTOR ENTAILS OPENING A DIFFUSION WINDOW OF THE SIZE AND LOCATION OF AN EMITTER DIFFUSION WINDOW IN A DIFFUSION MASKING LAYER FORMED ON THE SURFACE OF A SEMICONDUCTOR BODY OF A FIRST CONDUCTIVITY TYPE, AND FORMING A LOW-OHMIC REGION OF THE FIRST CONDUCTIVITY WITHIN THE SEMICONDUCTOR BODY BY THE DIFFUSION OF AN IMPURITY. THE BASE DIFFUSION WINDOW IS THEN OPENED AND THE BASE ZONE FORMED BY DIFFUSION SO THAT THE BASE ZONE EXTENDS TO A LESSER DEPTH FROM THE SURFACE OF THE SEMICONDUCTOR BODY THAN THE LOW OHMIC REGION, AND FINALLY THE EMITTER DIFFUSION WINDOW IS OPENED AT THE LOCATION AND OF THE SIZE OF THE FIRST OPENED DIFFUSION WINDOW AND AN EMITTER ZONE IS FORMED BY DIFFUSION IN THE BASE ZONE.
Inventors
- 👤 R Kaiser
Bibliographic Details
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