Organic semiconductors

Claim 2

A process for preparing a semiconductor element containing a layer of semiconductor having the formula: (D)k*(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is one or more anions selected from the group consisting of: polycarboxylic a. an inorganic anion; b. a monomeric organic anion derived from a monomeric organic acid selected from the group consisting of: an aliphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarbonxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulfonic acid, a heterocyclic acid containing from five to six atoms in the heterocyclic nucleus and having at least one hetero atom selected from the group consisting of a nitrogen, oxygen, or sulfur atom; a monohydric phenol, and a polyhydric phenol; and c. a polymeric anion derived from an anion-furnishing organic polymer; -p is the negative charge on each Z anion; q is the number of Z anions and has a value of 1 to 6; (D)* is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the nUmber of D cation moieties and has a value of 1 to 6; k represents the number of D neutral moieties and has a value of 0 to 5; the relationship between +n, m, -p and q being such that nm is equal to pq; comprising the steps of a. providing a supporting substrate, b. applying a composition comprising a solution of said semiconductor in a solvent onto the substrate and c. evaporating the solvent.

Claim 3

A process for preparing a semiconductor element containing a layer of a semiconductor having the formula: (D)k*(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is one or more anions selected from the group consisting of: a. an inorganic anion; b. a monomeric organic anion derived from a monomeric organic acid selected from the group consisting of: an aliphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarboxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulfonic acid, a heterocyclic acid containing from five to six atoms in the hetercyclic nucleus and having at least one hetero atom selected from the group consisting of a nitrogen, oxygen, or sulfur atom; a monohydric phenol, and a polyhydrica phenol; and c. a polymeric anion derived from an anion-furnishing organic polymer; p1 -p is the negative charge on each Z anion; qis the number of Z anions and has a value of 1 to 6; (D)* is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties and has a value of 1 to 6; k represents the number of D neutral moieties and has a value of 0 to 5; the relationship between +n, m, -p and q being such that nm is equal to pq; comprising the steps of a. providing a supporting substrate; b. applying to the substrate a first layer comprising a solution of a soluble salt of a fused polycyclic aromatic hydrocarbon as defined by D above and c. applying to said first layer a second layer comprising a solution of a compound from which anion Z is derived thus forming said semiconductor at the interface between the two layers.

Claim 4

A process for preparing a semiconductor element containing a layer of a semiconductor having the formula: (D)k*(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is one or more anions selected from the group consisting of: a. an inorganic anion; b. a monomeric organic anion derived from a monomeric organic acid selected from the group consisting of: an aliphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarboxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulvonic acid, a heterocyclic acid containing from five to six atoms in the heterocyclic nucleus and having at least one hetero atom selected from the group consisting of a nitrogen, oxygen, or sulfur atom; a monohydric phenol, and a polyhydric phenol; and c. a polymeric anion derived from an anion-furnishing organic polymer; -p is the negative charge on each Z anion; q is the number of Z anions and has a value of 1 to 6; (D)* is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties and has a value of 1 to 6; k represents the number of D neutral moieties and has a value of 0 to 5; the relationship between +n, m, -p and q being such that nm is equal to pq; comprising the steps of a. providing a supporting substrate, b. applying to the substrate a first layer comprising a solution of a compound from which anion Z is derived and c. applying to the first layer a second layer comprising a solution of a soluble salt of a fused polycyclic aromatic hydrocarbon as defined by D above thus forming said semiconductor at the interface between the two layers.

Claim 5

A process for preparing a semiconductor element containing a layer of a semiconductor having the formula: (D)k*(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; A is one or more anions selected from the group consisting of: a. an inorganic anion; b. a monomeric organic anion derived from a monomeric organic acid selected from the group consisting of: an aliphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarbonxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulvonid acid, a heterocyclic acid containing from five to six atoms in the hetercyclic nucleus and having at least one hetero atom selected from the group consisting of a nitroge, oxygen, or sulfur atom; a monohydric phenol, and a polyhydrica phenol; and c. a polymeric anion derived from an anion-furnishing organic polymer; -p is the negative charge on each Z anion; q is the number of Z anions and has a value of 1 to 6; (D)* is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties and has a value of 1 to 6; k represents the number of D neutral moieties and has a value of 0 to 5; the relationship between +n, m, -p and q being such that nm is equal to pq; comprising the steps of a. providing a supporting substrate, b. applying to the substrate a layer comprising a solution of a soluble salt of a fused polycyclic aromatic hydrocarbon as defined by D above and c. exposing said layer to the vapors of a compound from which anion Z is derived thus froming said semiconductor on the surface of the subrate.

Claim 6

A process for preparing a semiconductor element containing a layer of a semiconductor having the formula: (D)k*(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is a polymeric anion derived from an anion-furnishing organic polymer; -p is the negative charge on each Z anion; q is the number of Z anions and has a value of 1 to 6; (D)* is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties and has a value of 1 to 6; k represents the number of D neutral moieties and has a value of 0 to 5; the relationship between +n, m, -p and q being such that nm is equal to pq; comprising the steps of a. providing a supporting substrate which is an anionic polymer from which anion Z is derived and b. applying to the substrate a solution of a soluble salt of a fused polycyclic aromatic hydrocarbon as defined by D above thus forming said semiconductor on said substrate.

Claim 7

A process for preparing a semiconductor element containing a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element comprising the steps of a. providing a supporting substrate, b. applyiNg to the substrate a material having the formula: (D)k*(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is one or more anions selected from the group consisting of: a. an inorganic anion; b. a monomeric organic anion derived from a monomeric organic acid selected from the group consisting of: an aliphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarboxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulfonic acid, a heterocyclic acid containing from five to six atoms in the heterocyclic nucleus and having at least one hetero atom selected from the group consisting of a nitrogen, oxygen, or sulfur atom; a monohydric phenol, and a polyhydric phenol; and c. a polymeric anion derived from an anion-furnishing organic polymer; -p is the negative charge on each Z anion; q is the number of Z anions and has a value of 1 to 6; (D)* is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties and has a value of 1 to 6; k represents the number of D neutral moieties and has a value of 0 to 5; the relationship between +n, m, -p, and q being such that nm is equal to pq and c. heating the element to a temperature sufficient to decompose said material thereby producing said fused polycyclic aromatic hydrocarbon as a decomposition product.

Claim 8

A process for preparing a semiconductor element containing a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element comprising the steps of a. providing a supporting substrate, b. applying to the substrate a material having the formula: (D)k*(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is one or more anions selected from the group consisting of: a. an inorganic anion; b. a monomeric organic anion derived from a monomeric organic acid selected from the group consisting of: an alphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarboxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulfonic acid, a heterocyclic acid containing from five to six atoms in the heterocyclic nucleus and having at least one hetero atom selected from the group consisting of a nitrogen, oxygen, or sulfur atom; a monohydric phenol, and a polyhydric phenol; and c. a polymeric anion derived from an anion-furnishing organic polymer; -p is the negative charge on each Z anion; q is the number of Z anions and has a value of 1 to 6; (D)* is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties and has a value of 1 to 6; k represents the number of D neutral moieties and has a value of 0 to 5; the relationship between the +n, m, -p, and q being such that nm is equal to pq and c. treating the element with a reducing agent thereby producing said fused polycyclic aromatic hydrocarbon.

Claim 9

(D)k*(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is selected from the group consisting of a thiocyanate group, a tetrafluoroborate group, a sulfate group, a ferricyanice group, a molybdate group, a tungstAte group, a gallate group, an anion derived from a monomeric organic acid having at least 3 carbon atoms, anions derived from anion-furnishing organic polyerms and mixtures thereof; -p is the negative charge on each Z anion; q is the number of Z anions and has a value of 1 to 6; (D)* is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties and has a value of 1 to 6; k represents the number of D neutral moieties and has a value of 0 to 5; the relationship between +n, m, -p and q being such that nm is equal to pq.

Claim 10

Tetrathiotetracene citrate

Claim 11

Tetrathiotetracene phthalate

Claim 12

Tetrathiotetracene dichloroacetate

Claim 13

Tetrathiotetracene poly(vinyl methyl ethermaleic anhydride).