Patent US3754985A successfully refreshed from Google Patents.
US3754985A
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US
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Process for making a sintered photoconductive body
Assignee: Photophysics Inc
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Filing: 1971-04-05
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Granted: 1973-08-28
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Expires: 1991-04-05
Abstract
Abstract A process for making a sintered photoconductive body comprising growing cadmium sulfide crystals in the presence of hydrogen chloride gas to provide donor doping of the resultant crystals, pulverizing the donor crystals and measuring the chlorine content of the resultant pulverized donor doped material, mixing a quantity of copper with the donor doped material to provide acceptor doping, the quantity of copper being in a selected ratio to the quantity of chlorine, and finally, sintering the mixture to form the sintered photoconductive body.
Inventors
- 👤 G Marlor
- 👤 J Mooney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:32
CPC Classifications
C; C23; C23C; C23C16/00; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
30 words
A process for making a sintered photoconductive body as recited in claim 1 wherein said compound includes elements selected from the group consisting of zinc, cadmium, sulfur, selenium and tellurium.
Claim 2
Dependent Claim
113 words
A process for making a sintered photoconductive body comprising the steps of: growing substantially saturated, donor doped crystals of a compound comprised of elements selected from Groups II and VI of the Periodic Table of the Elements in the presence of a gas containing a donor element selected from the group consisting of fluorine, chlorine, bromine and iodine; pulverizing and mixing said donor doped crystals with a quantity of an acceptor element selected from the group consisting of copper, silver and gold, said quantity of acceptor element being a particular percentage of the quantity of said donor element in said donor doped crystals; and sintering the mixture to form the sintered photoconductive body.
Claim 3
Dependent Claim
31 words
A process for making a sintered photoconductive body as recited in claim 3 and wherein said compound includes elements selected from the group consisting of zinc, cadmium, sulfur, selenium and tellurium.
Claim 4
Dependent Claim
44 words
A process for making a sintered photoconductive body as recited in claim 4 and further comprising the step of determining the quantity of donor element in the donor doped crystals prior to selecting the quantity of acceptor for mixing with the donor doped crystals.
Claim 5
Dependent Claim
38 words
A process for making a sintered photoconductive body as recited in claim 4 wherein during said growing step said compound is heated to a temperature less than its sublimation temperature but sufficient to cause the compound to recrystallize.
Claim 6
Dependent Claim
44 words
A process for making a sintered photoconductive body as recited in claim 4 wherein said mixture is sintered by firing at a temperature within the range of 525*C to 650*C for a period of time within the range of 60 minutes to 10 minutes.
Claim 7
Dependent Claim
84 words
A process for making a sintered photoconductive body of a compound known to exhibit photoconductive effects, comprising the steps of: selecting a donor-to-acceptor atomic ratio in accordance with a selected set of light and dark conductivity characteristics for a particular photoconductive compound; doping a quantity of said compound with a known quantity of donor containing material to form a substantially saturated donor doped compound; and subsequently doping said donor doped compound with a quantity of acceptor containing material commensurate with said selected atomic ratio.
Claim 8
Dependent Claim
34 words
A process for making a sintered photoconductive body as recited in claim 8 wherein the donor doping step includes heating said compound to a predetermined temperature in the presence of gaseous donor containing material.
Claim 9
Dependent Claim
34 words
A process for making a sintered photoconductive body as recited in claim 8 wherein the acceptor doping step includes mixing said acceptor containing material with said donor doped compound and sintering the resultant mixture.
Claim 10
Independent Claim
84 words
A method for making a sintered photoconductive body of a compound known to exhibit photoconductive effects after being donor and acceptor doped, which comprises the steps of: forming substantially saturated donor doped crystals of the compound in the absence of the acceptor; and sintering the donor doped crystals in the presence of a measured quantity of acceptor, the amount of acceptor being selected in accordance with the amount of donor in said doped crystal and a selected ratio of donor level to acceptor level.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-27 | 1977-02-26 | 1977-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-27 | 1981-02-26 | 1981-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-27 | 1985-02-26 | 1985-08-28 | $7700.00 | Window Closed / Lapsed |