Patent US3752711A successfully refreshed from Google Patents.
US3752711A
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US
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Method of manufacturing an igfet and the product thereof
Assignee: US Philips Corp
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Filing: 1971-06-01
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Granted: 1973-08-14
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Expires: 1991-06-01
Abstract
Abstract THE INVENTION RELATES TO A METHOD OF MANUFACTURING AN INSULATED GATE FIELD EFFECT TRANSISTOR IN WHICH AN INSET SILICON OXIDE LAYER IS PROVIDED ON THE SURFACE OF A SILICON BODY BY MEANS OF A MASKING LAYER WHICH MASKS AGAINST OXIDATION.
Inventors
- 👤 E Kooi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:10
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0128; H10W10/10; H10W10/13; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/103; Y10S148/105; Y10S148/117
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-13 | 1977-02-12 | 1977-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-13 | 1981-02-12 | 1981-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-13 | 1985-02-12 | 1985-08-14 | $7700.00 | Window Closed / Lapsed |