US3751723A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hot carrier metal base transistor having a p-type emitter and an n-type collector
Assignee: Sprague Electric Co
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Filing: 1972-03-01
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Granted: 1973-08-07
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Expires: 1992-03-01
Abstract
Abstract A p-type material comprising the emitter region of a metal base hot carrier transistor with n-type material comprising the collector to provide a p-metal-n hot carrier transistor. Hot holes injected through the emitter-base barrier give rise to hot electrons having sufficient energy to pass through the basecollector barrier.
Inventors
- 👤 G Shirn
- 👤 N Miller
- 👤 W Patterson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:49
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
157 words
A metal base hot hole device consisting essentially of a ptype silicon emitter layer having a sputtered structure on the surface of a thin molybdenum layer base having a highly oriented single crystal structure on a n-n epitaxial body as a collector having an epitaxial structure to form metal-semiconductor junctions between the emitter and the base and the body as the collector, and circuit means for biasing the emitter-base junction in a forward direction, the holes in the emitter, the thickness of the metal layer and the potential in the circuit means cooperating to cause holes to move across the junction of the p-type sputtered silicon emitter with the highly oriented thin molybdenum base, and the base and the collector being connected to cause the holes under kinetic energy in the molybdenum to undergo energy transfer from hole-to-electron, the electrons in the base being hot, and under the said basecollector connection penetrating and crossing the base-collector junction.
Claim 2
Dependent Claim
157 words
A metal base hot hole device consisting essentially of a ptype silicon emitter layer having a sputtered structure on the surface of a thin molybdenum layer base having a highly oriented single crystal structure on a n-n epitaxial body as a collector having an epitaxial structure to form metal-semiconductor junctions between the emitter and the base and the body as the collector, and circuit means for biasing the emitter-base junction in a forward direction, the holes in the emitter, the thickness of the metal layer and the potential in the circuit means cooperating to cause holes to move across the junction of the p-type sputtered silicon emitter with the highly oriented thin molybdenum base, and the base and the collector being connected to cause the holes under kinetic energy in the molybdenum to undergo energy transfer from hole-to-electron, the electrons in the base being hot, and under the said basecollector connection penetrating and crossing the base-collector junction.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-06 | 1977-02-05 | 1977-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-06 | 1981-02-05 | 1981-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-06 | 1985-02-05 | 1985-08-07 | $7700.00 | Window Closed / Lapsed |