Patent US3751293A successfully refreshed from Google Patents.
US3751293A
Expired / Lapsed
US
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Method for reducing interdiffusion rates between thin film components
Assignee: AT&T Inc
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Filing: 1969-04-04
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Granted: 1973-08-07
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Expires: 1989-04-04
Abstract
Abstract A method for reducing interdiffusion rates between thin film conductive components. The method comprises vacuum depositing the conductive films at a partial pressure of 10-70 nicrons in the presence of an inert gas (e.g., Argon).
Inventors
- 👤 H Theuerer
- 👤 P Turner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:39
CPC Classifications
H; H01; H01B; H01B1/00; C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/18; C23C14/22; C23C14/24; H10; H10N; H10N97/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
15 words
A method in accordance with claim 1 wherein one of said conductive components is gold.
Claim 2
Dependent Claim
15 words
A method in accordance with claim 2 wherein one of said conductive components is silver.
Claim 3
Dependent Claim
12 words
A method in accordance with claim 3 wherein said gas is argon.
Claim 4
Dependent Claim
12 words
A method in accordance with claim 3 wherein said gas is helium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-06 | 1977-02-05 | 1977-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-06 | 1981-02-05 | 1981-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-06 | 1985-02-05 | 1985-08-07 | $7700.00 | Window Closed / Lapsed |