Abstract A voltage variable RC phase shifter incorporating reverse bias P-N junctions functioning as voltage variable capacitors in conjunction with resistance elements to produce a phase shift variation up to a maximum of 90*. The degree of phase shift over that range is controlled by controlling the DC reverse bias. The fact that the phase shifter does not require inductances makes it possible to produce a monolithic implementation of the circuit. According to the invention, this implementation makes the use of double diffusion in the semiconductor layers to produce a hyperabrupt junction and results in the capability of producing a relatively large change in capacitance with a small change in the bias potential.
Inventors
👤 G Schaffner
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-02 22:22
CPC Classifications
H; H03; H03H; H03H7/00; H03H7/18; H03H7/20
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
118 words
A monolithic, non-inductive ladder-type phase shifter comprising: a body portion including a semi-conductor substrate, a first lightly doped layer on said substrate, a plurality of areas on said first layer having an N diffusion, a portion of each of said N dIffusions having a P+ diffusion to produce a plurality of double diffused semi-conductor junctions, signal means for supplying an AC signal, resistive means deposited on said body for providing a resistive load to said junctions and a voltage drop on said signal, and bias means for varying the capacitance of said junctions and inducing a phase shift in said AC signal, said junctions being connected to sum the total of the individual phase shifts for each junction.
Claim 2
Dependent Claim
118 words
A monolithic, non-inductive ladder-type phase shifter comprising: a body portion including a semi-conductor substrate, a first lightly doped layer on said substrate, a plurality of areas on said first layer having an N diffusion, a portion of each of said N dIffusions having a P+ diffusion to produce a plurality of double diffused semi-conductor junctions, signal means for supplying an AC signal, resistive means deposited on said body for providing a resistive load to said junctions and a voltage drop on said signal, and bias means for varying the capacitance of said junctions and inducing a phase shift in said AC signal, said junctions being connected to sum the total of the individual phase shifts for each junction.
Claim 3
Dependent Claim
18 words
The monolithic phase shifter of claim 1 wherein, said bias means comprises a source of variable voltage DC.
Claim 4
Dependent Claim
18 words
The monolithic phase shifter of claim 1 wherein: said resistive means contacts said junction through a metalization layer.
Claim 5
Dependent Claim
29 words
The monolithic phase shifter of claim 1 wherein: an insulating layer is laid over portions of said first layer; and said resistive means is deposited on said insulating layer.