Semiconductor device

Claim 1

A semiconductor device comprising a semiconductor body having a substantially flat surface and including a collector zone of a first conductivity type, a base zone of a second conductivity type adjoining said flat surface, an emitter zone of said first conductivity type which adjoins said surface and is fully surrounded within said body by said base zone, an insulating layer covering at least a portion of said surface and containing contact windows, and metal layers at least partly disposed on said insulating layer for making electrical contact to said emitter and base zones, said emitter zone comprising at least two strip-shaped substantially parallel emitter regions each comprising alternately narrower and wider parts measured parallel to said flat surface, at least two successive ones of said wider parts of one of said strip-shaped emitter regions being located opposite to two successive wider parts of an adjacent stripshaped emitter region, a strip-shaped base region disposed between said adjacent emitter regions and adjoining said Flat surface, said base region comprising a part of said base zone and having alternately narrower and wider parts measured parallel to said flat surface and defined by and extending between the oppositely located successive wider and narrower emitter region parts respectively, said strip-shaped emitter and base regions being electrically connected via said contact windows in said insulating layer to said respective metal layers, said contact windows over said strip-shaped emitter regions and over said strip-shaped base regions being present only above respective said wider parts of said regions.