Contact members for silicon semiconductor devices

Claim 1

In a semiconductor device having a contact and interconnection layer arrangement in which the silicon wafer has two mutually opposite conductivity regions in close proximity of one of its surfaces, the p-n junction formed between said two regions is extended from the inside toward the surface of the silicon wafer, a silicon oxide coating is formed on said wafer, holes are disposed on said coating by removing part of the silicon oxide coating above said regions, metallic layers for contact and interconnection are formed over the exposed part of said two regions in said holes, and said metallic layers are extended from said holes out over said silicon oxide coating; characterized in that a contact and interconnection layer comprises a first layer containing an alloy consisting of molybdenum and nickel formed on a respective region and on said silicon oxide coating, said first layer having about 5 to about 50 percent of nickel content by weight, a thin layer made of silver or copper on said first layer, and a thin gold layer formed on said silver or copper thin layer, with a thin nickel silicide layer in the boundary between the respective region and said first layer.